BFP405 Infineon Technologies, BFP405 Datasheet - Page 5

• Manufacturer Part Number: BFP405
• Description: RF TRANSISTOR, NPN, SOT-343
• Manufacturer: Infineon Technologies

Specifications of BFP405

• Transistor Polarity: N Channel
• Collector Emitter Voltage V(br)ceo: 4.5V
• Gain Bandwidth Ft Typ: 25GHz
• Power Dissipation Pd: 55mW
• Dc Collector Current: 12mA
• Operating Temperature Range: -65°C To +150°C
• Rf: RoHS Compliant
• Dc Current Gain Hfe: 95
• Rohs Compliant: Yes
• Packages: SOT343
• Vceo (max): 4.5 V
• Ic(max): 12.0 mA
• Nfmin (typ): 1.25 dB
• Gmax (typ): 23.0 dB
• Oip3: 15.0 dBm

For non-linear simulation:
· Use transistor chip parameters in Berkeley SPICE 2G.6 syntax for all simulators.
· If you need simulation of the reverse characteristics, add the diode with the
· Simulation of package is not necessary for frequencies < 100MHz.
Note:
· This transistor is constructed in a common emitter configuration. This feature causes
The common emitter configuration shows the following advantages:
· Higher gain because of lower emitter inductance.
· Power is dissipated via the grounded emitter leads, because the chip is mounted
Please note, that the broadest lead is the emitter lead.
Common Emitter S- and Noise-parameter
For detailed S- and Noise-parameters please contact your local Infineon Technologies
distributor or sales office to obtain a Infineon Technologies Application Notes
CD-ROM or see Internet: http://www.infineon.com/silicondiscretes
an additional reverse biased diode between emitter and collector, which does not
effect normal operation.
on copper emitter leadframe.
C'-E'- diode data between collector and emitter.
For higher frequencies add the wiring of package equivalent circuit around the
non-linear transistor and diode model.
Transistor Schematic Diagram
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2005-10-11
BFP405