BDX34C STMicroelectronics, BDX34C Datasheet - Page 2

• Manufacturer Part Number: BDX34C
• Description: DARLINGTON TRANSISTOR, TO-220
• Manufacturer: STMicroelectronics

Specifications of BDX34C

• Transistor Polarity: PNP
• Collector Emitter Voltage V(br)ceo: 100V
• Power Dissipation Pd: 70W
• Dc Collector Current: 10A
• Transistor Case Style: TO-220
• No. Of Pins: 3
• Svhc: No SVHC (15-Dec-2010)
• Av Current: RoHS Compliant
• Dc Current Gain Hfe: 750
• Rohs Compliant: Yes

BDX33B BDX33C BDX34B BDX34C
THERMAL DATA
ELECTRICAL CHARACTERISTICS (T
For PNP types voltage and current values are negative.
Safe Operating Area
2/4
V
V
V
Pulsed: Pulse duration = 300 s, duty cycle 1.5 %
V
Symbol
R
CEO(sus)
CER(sus)
CEV(sus)
CE(sat)
V
h
thj-case
I
I
I
V
CBO
CEO
EBO
h
FE
BE
F
fe
Thermal Resistance Junction-case
Collector Cut-off Current
(I
Collector Cut-off Current
(I
Emitter Cut-off Current
(I
Collector-Emitter Sustaining
Voltage (I
Collector-emitter Sustaining
Voltage (R
Collector-emitter Sustaining
Voltage (V
Collector-emitter Saturation
Voltage
Base-emitter Voltage
DC Current Gain
Parallel-Diode Forward
Voltage
Small Signal Current Gain
E
B
C
= 0)
= 0)
= 0)
Parameter
B
BE
BE
= 0)
=-1.5 V)
=100
)
case
for BDX33B/34B
for BDX33C/34C
T
for BDX33B/34B
for
for BDX33B/34B
for BDX33C/34C
T
for BDX33B/34B
for BDX33C/34C
V
I
I
I
I
I
I
I
I
C
C
C
C
C
C
F
C
case
case
EB
= 8 A
BDX33C/34C
=100 mA for BDX33B/34B
= 100 mA for BDX33B/34B
= 100 mA for BDX33B/34B
= 3 A
= 3 A
= 3 A
= 1 A
= 25
= 5 V
= 100
= 100
Test Conditions
o
C unless otherwise specified)
V
CE
o
o
C
C
for BDX33C/34C
for BDX33C/34C
for BDX33C/34C
= 5 V
I
V
V
V
V
V
V
B
V
V
V
V
CE
CE
CB
CB
CB
CB
CE
CE
CE
CE
= 6 mA
f = 1MHz
= 80 V
= 100 V
= 3 V
= 3 V
= 80 V
= 100V
= 40 V
= 50V
= 40 V
= 50 V
Min.
100
100
100
750
100
80
80
80
1.78
Typ.
Max.
0.2
0.2
0.5
0.5
2.5
2.5
10
10
5
5
5
4
o
Unit
C/W
mA
mA
mA
mA
mA
mA
mA
mA
mA
V
V
V
V
V
V
V
V
V
V