SMBT3904 Infineon Technologies, SMBT3904 Datasheet - Page 2

• Manufacturer Part Number: SMBT3904
• Description: BIPOLAR TRANSISTOR, NPN, 40V
• Manufacturer: Infineon Technologies

Specifications of SMBT3904

• Transistor Polarity: NPN
• Collector Emitter Voltage V(br)ceo: 40V
• Transition Frequency Typ Ft: 270MHz
• Power Dissipation Pd: 330mW
• Dc Collector Current: 200mA
• Dc Current Gain Hfe: 100
• No. Of Pins: 3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Electrical Characteristics at T
Parameter
DC Characteristics
Collector-emitter breakdown voltage
I
Collector-base breakdown voltage
I
Emitter-base breakdown voltage
I
Collector-base cutoff current
V
DC current gain
I
I
I
I
I
Collector-emitter saturation voltage
I
I
Base emitter saturation voltage
I
I
1
2
Thermal Resistance
Parameter
Junction - soldering point
SMBT3904/ MMBT3904
SMBT3904L3
SMBT3904S
SMBT3904U
C
C
E
C
C
C
C
C
C
C
C
C
For calculation of R
Pulse test: t < 300µs; D < 2%
CB
= 10 µA, I
= 1 mA, I
= 10 µA, I
= 100 µA, V
= 1 mA, V
= 10 mA, V
= 50 mA, V
= 100 mA, V
= 10 mA, I
= 50 mA, I
= 10 mA, I
= 50 mA, I
= 30 V, I
B
C
E
CE
B
B
B
B
E
= 0
CE
CE
= 0
= 0
CE
= 1 mA
= 5 mA
= 1 mA
= 5 mA
= 0
CE
2)
= 1 V
= 1 V
= 1 V
thJA
= 1 V
= 1 V
please refer to Application Note Thermal Resistance
1)
2)
A
= 25°C, unless otherwise specified
2)
2
Symbol
V
V
V
I
h
V
V
Symbol
R
CBO
FE
(BR)CEO
(BR)CBO
(BR)EBO
CEsat
BEsat
thJS
SMBT3904...MMBT3904
min.
0.65
100
40
70
60
30
40
60
6
-
-
-
-
Values
Value
typ.
245
140
135
tbd
-
-
-
-
-
-
-
-
-
-
-
-
-
max.
0.85
0.95
300
0.2
0.3
50
2006-07-11
-
-
-
-
-
-
-
Unit
V
nA
-
V
Unit
K/W