MJ11032 MULTICOMP, MJ11032 Datasheet - Page 4

• Manufacturer Part Number: MJ11032
• Description: BIPOLAR TRANSISTOR, NPN, 120V, TO-3
• Manufacturer: MULTICOMP

Specifications of MJ11032

• Transistor Polarity: NPN
• Collector Emitter Voltage V(br)ceo: 120V
• Power Dissipation Pd: 300W
• Dc Collector Current: 50A
• Dc Current Gain Hfe: 1000
• Operating Temperature Range: -65°C To +200°C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Specifications
MJ11032, 11033
Darlington Power Transistors
maximum
I
C(av)
(A)
50
Active-Region Safe Operating Area (SOA)
V
CE
maximum
I
C
, Collector Emitter Voltage (Volts)
, Collector Current (AMP)
V
120
(V)
CEO
“ON” Voltages
at I
minimum
1000
C
h
FE
= 25A
at 25°C
P
300
(W)
tot
Page 4
There are two limitations on the power handling ability of a
transistor average junction temperature and second breakdown
safe operating area curves indicate I
that must be observed for reliable operation i.e, the transistor
must not be subjected to greater dissipation than the curves
indicate.
The data of SOA curve is based on T
depending on conditions. Second breakdown pulse limits are
valid for duty cycles to 10% provided T
temperatures, thermal limitation will reduce the power that can be
handled to values less than the limitations imposed by second
breakdown.
Package
TO-3
I
C
, Collector Current (AMP)
Type
NPN
PNP
“ON” Voltages
C
J(PK)
-V
Part Number
J(PK)
CE
MJ11032
MJ11033
= 200°C; T
limits of the transistor
≤200°C, At high case
31/05/05 V1.0
C
is variable