MJ11032 MULTICOMP, MJ11032 Datasheet - Page 2

BIPOLAR TRANSISTOR, NPN, 120V, TO-3

MJ11032

Manufacturer Part Number
MJ11032
Description
BIPOLAR TRANSISTOR, NPN, 120V, TO-3
Manufacturer
MULTICOMP
Datasheet

Specifications of MJ11032

Transistor Polarity
NPN
Collector Emitter Voltage V(br)ceo
120V
Power Dissipation Pd
300W
Dc Collector Current
50A
Dc Current Gain Hfe
1000
Operating Temperature Range
-65°C To +200°C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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Thermal Characteristics
Electrical Characteristics (T
MJ11032, 11033
Darlington Power Transistors
OFF Characteristics
Collector-Emitter Sustaining Voltage (1)
(I
Collector Cut off Current
(V
Collector-Emitter Leakage Current
(V
(V
Emitter Cut off Current
(V
ON Characteristics (1)
DC Current Gain
(I
(I
Collector-Emitter Saturation Voltage
(I
(I
Base-Emitter Saturation Voltage
(I
(I
C
C
C
C
C
C
C
Thermal Resistance Junction to Case
CE
CE
CE
EB
= 100mA, I
= 25A, V
= 50A, V
= 25A, I
= 50A, I
= 25A, I
= 50A, I
= 50V, I
= 5.0V, I
= 120V, R
= 120V, R
B
B
B
B
CE
CE
B
= 200mA)
= 250mA)
= 500mA)
= 300mA)
Characteristic
C
B
= 0)
= 5.0V)
= 5.0V)
BE
BE
= 0)
= 0)
Figure - 1 Power Derating
= 1kΩ)
= 1kΩ, T
T
C
Characteristic
, Temperature (°C)
C
= 125°C)
C
= 25°C unless otherwise noted)
Symbol
Rθjc
Page 2
Maximum
0.584
V
Symbol
V
V
CEO(sus)
I
CE(sat)
I
I
BE(sat)
h
CEO
CER
EBO
FE
°C/W
Unit
Minimum
1000
120
400
-
-
-
-
-
Maximum
18,000
2.0
2.0
5.0
2.5
3.5
3.0
4.5
10
-
31/05/05 V1.0
Unit
mA
V
V
-

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