ULN2003AFWG Toshiba, ULN2003AFWG Datasheet - Page 6

• Manufacturer Part Number: ULN2003AFWG
• Description: DARLINGTON ARRAY 7NPN, SMD, 2003
• Manufacturer: Toshiba

Specifications of ULN2003AFWG

• Module Configuration: Seven
• Transistor Polarity: NPN
• Collector Emitter Voltage V(br)ceo: 50V
• Power Dissipation Pd: 650mW
• Operating Temperature Range: -40°C To +85°C
• Transistor Case Style: SOIC
• No. Of: RoHS Compliant
• Dc Current Gain Hfe: 1000
• Rohs Compliant: Yes

Precautions for Using
8. t
Note 1: Pulse width 50 µs, duty cycle 10%
Note 2: See below
Note 3: C
This IC does not include built-in protection circuits for excess current or overvoltage.
If this IC is subjected to excess current or overvoltage, it may be destroyed.
Hence, the utmost care must be taken when systems which incorporate this IC are designed.
Utmost care is necessary in the design of the output line, COMMON and GND line since IC may be destroyed
due to short−circuit between outputs, air contamination fault, or fault by improper grounding.
ON
Input Condition
ULN2003AP/AFW
ULN2004AP/AFW
Output impedance 50 Ω, t
, t
L
OFF
includes probe and jig capacitance.
Type Number
r
≤ 5 ns, t
R1
0
0
f
≤ 10 ns
6
V
3 V
8 V
IH
ULN2003,04AP/AFW
2003-05-26