ULN2003AFWG Toshiba, ULN2003AFWG Datasheet - Page 4

• Manufacturer Part Number: ULN2003AFWG
• Description: DARLINGTON ARRAY 7NPN, SMD, 2003
• Manufacturer: Toshiba

Specifications of ULN2003AFWG

• Module Configuration: Seven
• Transistor Polarity: NPN
• Collector Emitter Voltage V(br)ceo: 50V
• Power Dissipation Pd: 650mW
• Operating Temperature Range: -40°C To +85°C
• Transistor Case Style: SOIC
• No. Of: RoHS Compliant
• Dc Current Gain Hfe: 1000
• Rohs Compliant: Yes

Electrical Characteristics
Output leakage current
Collector−emitter saturation voltage
DC Current transfer ratio
Input current
(output on)
Input current (output off)
Input voltage
(output on)
Clamp diode reverse current
Clamp diode forward voltage
Input capacitance
Turn−on delay
Turn−off delay
Characteristic
ULN2003A
ULN2004A
ULN2003A
ULN2004A
(Ta = 25°C unless otherwise noted)
V
I
V
Symbol
I
IN (OFF)
IN (ON)
CE (sat)
IN (ON)
I
t
h
CEX
C
t
OFF
V
ON
I
FE
R
IN
F
Circuit
Test
⎯
1
2
2
3
4
5
6
7
8
8
4
V
V
I
I
I
V
V
V
I
V
h
V
V
I
V
C
V
C
OUT
OUT
OUT
OUT
F
FE
CE
CE
CE
IN
IN
CE
R
R
OUT
L
OUT
L
= 350 mA
= 15 pF
= 15 pF
= 50 V, Ta = 25°C
= 50 V, Ta = 85°C
= 2.4 V, I
= 9.5 V, I
= 800
= 50 V, Ta = 25°C
= 50 V, Ta = 85°C
= 2 V, I
= 2 V
= 350 mA, I
= 200 mA, I
= 100 mA, I
= 500 µA, Ta = 85°C
= 50 V, R
= 50 V, R
Test Condition
OUT
OUT
OUT
I
I
I
I
OUT
OUT
OUT
OUT
L
L
IN
IN
IN
= 350 mA
= 125 Ω
= 125 Ω
= 350 mA
= 350 mA
= 500 µA
= 350 µA
= 250 µA
= 350 mA
= 200 mA
= 350 mA
= 200 mA
ULN2003,04AP/AFW
1000
Min
50
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Typ.
1.3
1.1
0.9
0.4
0.8
0.1
0.2
65
15
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
2003-05-26
Max
100
100
1.6
1.3
1.1
0.7
1.2
2.6
2.0
4.7
4.4
2.0
50
50
⎯
⎯
⎯
⎯
⎯
Unit
mA
µA
µA
µA
pF
µs
V
V
V