PBSS4041SP NXP Semiconductors, PBSS4041SP Datasheet - Page 6

• Manufacturer Part Number: PBSS4041SP
• Description: TRANSISTOR,NPN/NPN,60V,SO8
• Manufacturer: NXP Semiconductors

Specifications of PBSS4041SP

• Module Configuration: Dual
• Transistor Polarity: PNP
• Collector Emitter Voltage V(br)ceo: -60V
• Dc Collector Current: -5.9A
• Transistor Case Style: SOIC
• No. Of Pins: 8
• Svhc: No SVHC (18-Jun-2010)
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

NXP Semiconductors
7. Characteristics
PBSS4041SP
Product data sheet
Table 8.
T
[1]
Symbol Parameter
Per transistor
I
I
I
h
V
V
t
t
t
t
t
t
f
C
R
V
CBO
CES
EBO
d
r
on
s
f
off
T
amb
FE
CEsat
BEsat
BEon
CEsat
c
Pulse test: t
= 25
°
collector-base
cut-off current
collector-emitter
cut-off current
emitter-base
cut-off current
DC current gain
collector-emitter
saturation voltage
collector-emitter
saturation resistance
base-emitter
saturation voltage
base-emitter
turn-on voltage
delay time
rise time
turn-on time
storage time
fall time
turn-off time
transition frequency
collector capacitance V
C unless otherwise specified.
Characteristics
p
≤ 300 μs; δ ≤ 0.02.
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 18 October 2010
V
Conditions
V
V
T
V
V
V
I
I
I
I
I
I
I
I
V
V
I
f = 100 MHz
f = 1 MHz
C
C
C
C
C
C
C
C
Bon
j
CB
CB
CE
EB
CE
CE
CC
CE
CB
I
I
I
I
I
= 150 °C
= −1 A; I
= −1 A; I
= −2 A; I
= −4 A; I
= −4 A; I
= −4 A; I
= −1 A; I
= −4 A; I
C
C
C
C
C
= −0.05 A; I
= −60 V; I
= −60 V; I
= −48 V; V
= −5 V; I
= −2 V
= −2 V; I
= −10 V; I
= −10 V; I
= −12.5 V; I
= −500 mA
= −1 A
= −2 A
= −4 A
= −6 A
60 V, 5.9 A PNP/PNP low V
B
B
B
B
B
B
B
B
C
= −50 mA
= −10 mA
= −40 mA
= −200 mA
= −400 mA
= −400 mA
= −100 mA
= −400 mA
C
E
E
C
E
= 0 A
= −2 A
BE
Boff
= 0 A
= 0 A;
= −100 mA;
= i
C
= 0 V
= −1 A;
e
= 0.05 A
= 0 A;
[1]
[1]
[1]
[1]
[1]
Min
-
-
-
-
200
180
150
120
80
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
PBSS4041SP
CEsat
300
105
440
75
515
Typ
-
-
-
-
270
250
180
125
−65
−130
−155
−220
−190
47
−0.84
−1
−0.78
45
60
110
85
© NXP B.V. 2010. All rights reserved.
(BISS) transistor
Max
−100
−50
−100
−100
-
-
-
-
-
−90
−190
−230
−330
−275
70
−1
−1.2
−0.85
-
-
-
-
-
-
-
-
6 of 15
ns
ns
Unit
nA
μA
nA
nA
mV
mV
mV
mV
mV
mΩ
V
V
V
ns
ns
ns
ns
MHz
pF