BCV62C Infineon Technologies, BCV62C Datasheet

TRANSISTOR, DUAL, PNP, SOT-143

BCV62C

Manufacturer Part Number
BCV62C
Description
TRANSISTOR, DUAL, PNP, SOT-143
Manufacturer
Infineon Technologies
Datasheet

Specifications of BCV62C

Module Configuration
Dual
Transistor Polarity
PNP
Collector Emitter Voltage V(br)ceo
30V
Gain Bandwidth Ft Typ
250MHz
Power Dissipation Pd
300mW
Dc Collector Current
100mA
Transistor Case
RoHS Compliant
Dc Current Gain Hfe
520
Rohs Compliant
Yes
Packages
SOT143-4-1
Polarity
PNP
Vceo (max)
30.0 V
Ptot (max)
-
Hfe (min)
420.0 - 800.0
Ic
2.0 mA

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PNP Silicon Double Transistor




Type
BCV62A
BCV62B
BCV62C
Maximum Ratings
Parameter
Collector-emitter voltage
(transistor T1)
Collector-base voltage (open emitter)
(transistor T1)
Emitter-base voltage
DC collector current
Peak collector current
Base peak current (transistor T1)
Total power dissipation, T
Junction temperature
Storage temperature
Thermal Resistance
Junction - soldering point
1 For calculation of R
To be used as a current mirror
Good thermal coupling and V
High current gain
Low collector-emitter saturation voltage
thJA
please refer to Application Note Thermal Resistance
Marking
3Js
3Ks
3Ls
1)
S
= 99 °C
BE
matching
1 = C2
1 = C2
1 = C2
Tr.1
C1 (2)
E1 (3)
Pin Configuration
2 = C1
2 = C1
2 = C1
1
Symbol
V
V
V
I
I
I
P
T
T
R
C
CM
BM
C2 (1)
E2 (4)
j
stg
EHA00013
CEO
CBO
EBS
tot
thJS
Tr.2
3 = E1
3 = E1
3 = E1
4
4 = E2
4 = E2
4 = E2
-65 ... 150
Value

100
200
200
300
150
30
30
1 70
6
3
Package
SOT143
SOT143
SOT143
Jul-11-2001
1
BCV62
VPS05178
Unit
V
mA
mW
°C
K/W
2

Related parts for BCV62C

BCV62C Summary of contents

Page 1

... Good thermal coupling and V  High current gain  Low collector-emitter saturation voltage  Type Marking 3Js BCV62A 3Ks BCV62B 3Ls BCV62C Maximum Ratings Parameter Collector-emitter voltage (transistor T1) Collector-base voltage (open emitter) (transistor T1) Emitter-base voltage DC collector current Peak collector current Base peak current (transistor T1) Total power dissipation ...

Page 2

... Base-emitter saturation voltage mA 0 100 mA Base-emitter voltage mA mA Pulse test: t 300 25°C, unless otherwise specified A Symbol V (BR)CEO V (BR)CBO V (BR)EBO I CBO I CBO BCV62A BCV62B BCV62C V CEsat V BEsat V BE(ON) 2 BCV62 Values Unit min. typ. max µA 100 - - - 125 180 220 220 290 475 420 ...

Page 3

Electrical Characteristics at T Parameter DC Characteristics Base-emitter forward voltage µ 250 mA E Matching of transistor T1 and transistor 0.5mA and CE1 ...

Page 4

Test circuit for current matching ... CE1 Note: Voltage drop at contacts: V Characteristic for determination parameter under condition ... ...

Page 5

Total power dissipation P 350 mW 250 200 150 100 Permissible pulse load = tot S P totmax 10 P tot max P tot ...

Page 6

Package Outline Foot Print Marking Layout Pin 1 Packing Code E6327: Reel ø180 mm = 3.000 Pieces/Reel Code E6433: Reel ø330 mm = 10.000 Pieces/Reel 2.9 ±0 0.2 +0.1 0.8 -0.05 +0.1 0.4 -0.05 ...

Page 7

... For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support device or system affect the safety or effectiveness of that device or system. ...

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