BCM856BS NXP Semiconductors, BCM856BS Datasheet - Page 3

• Manufacturer Part Number: BCM856BS
• Description: TRANSISTOR,PNP/PNP MATCHED,SOT363
• Manufacturer: NXP Semiconductors

Specifications of BCM856BS

• Module Configuration: Dual
• Transistor Polarity: PNP
• Collector Emitter Voltage V(br)ceo: -65V
• Gain Bandwidth Ft Typ: 175MHz
• Power Dissipation Pd: 300mW
• Dc Collector Current: -100mA
• Operating: RoHS Compliant
• Dc Current Gain Hfe: 290
• Rohs Compliant: Yes

NXP Semiconductors
4. Marking
5. Limiting values
BCM856BS_BCM856DS_1
Product data sheet
Table 5.
[1]
Table 6.
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
Type number
BCM856BS
BCM856BS/DG
BCM856DS
BCM856DS/DG
Symbol
Per transistor
V
V
V
I
I
P
Per device
P
T
T
T
C
CM
j
amb
stg
CBO
CEO
EBO
tot
tot
* = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
Parameter
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current
peak collector current
total power dissipation
total power dissipation
junction temperature
ambient temperature
storage temperature
Marking codes
Limiting values
BCM856BS (SOT363)
BCM856BS/DG (SOT363)
BCM856DS (SOT457)
BCM856DS/DG (SOT457)
BCM856BS (SOT363)
BCM856BS/DG (SOT363)
BCM856DS (SOT457)
BCM856DS/DG (SOT457)
Rev. 01 — 7 August 2008
BCM856BS; BCM856DS
Marking code
*BS
PB*
DS
R9
Conditions
open emitter
open base
open collector
single pulse;
t
T
T
p
amb
amb
PNP/PNP matched double transistors
1 ms
25 C
25 C
[1]
[1]
[1]
[1]
[1]
Min
-
-
-
-
-
-
-
-
-
-
55
65
© NXP B.V. 2008. All rights reserved.
Max
200
250
300
380
150
+150
+150
80
65
5
100
200
Unit
V
V
V
mA
mA
mW
mW
mW
mW
C
C
C
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