NTE54000 NTE ELECTRONICS, NTE54000 Datasheet - Page 2

• Manufacturer Part Number: NTE54000
• Description: SCR (Silicon-Controlled Rectifier)
• Manufacturer: NTE ELECTRONICS

Specifications of NTE54000

• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Note 1. Minimum non−trigger V
Peak Off−State Current
DC Holding Current
DC Gate Trigger Current
DC Gate Trigger Voltage
Gate Controlled Turn−On Time
Circuit Commutated Turn−Off Time
Critical Rate of Rise of Off−State Voltage
Max Rate of Rise of On−State Current
NTE54003
NTE54004
NTE54000, NTE54001, NTE54002
Parameter
.147 (3.75)
.070 (1.78) Max
Dia Max
Cathode
.100 (2.54)
GT
Symbol
at +125°C is 0.2V.
I
dv/dt
I
DRM
di/dt
V
RRM
I
t
I
GT
t
GT
gt
H
q
,
V
T
Initial On−State Current = 400mA,
Gate Open
V
V
Note 1
I
Rise Time ≤ 0.1μs
I
Pulse Duration = 50μs, dv/dt = 20V/μs,
di/dt = −30A/μs
T
I
GT
T
GT
.420 (10.67)
C
DRM
C
D
D
= 2A, I
= +100°C
= +100°C
= 12V, R
= 12V, R
= 150mA, Min. Width = 15μs,
= 150mA, Rise Time ≤ 0.1μs
Max
& V
GT
Tab
RRM
Test Conditions
L
L
= 200mA at Turn−On,
= 30Ω
= 30Ω, T
= Max Rating,
(6.35)
.250
Max
Gate
Anode/Tab
C
= +25°C,
.110 (2.79)
(12.7)
(12.7)
.500
.500
Max
Min
Min
500
−
−
−
−
5
−
−
−
−
Typ
−
−
−
−
−
−
−
−
−
−
Max Unit
175 A/μs
1.0
1.5
5.0
1.5
2.5
60
40
35
−
V/μs
mA
mA
mA
mA
mA
μs
μs
V