NTE5408 NTE ELECTRONICS, NTE5408 Datasheet
NTE5408
Manufacturer Part Number
NTE5408
Description
SCR THYRISTOR, 3A, 200V, TO-5
Manufacturer
NTE ELECTRONICS
Datasheet
1.NTE5408.pdf
(2 pages)
Specifications of NTE5408
Peak Repetitive Off-state Voltage, Vdrm
200V
Gate Trigger Current Max, Igt
0.2mA
Current It Av
3A
On State Rms Current It(rms)
4A
Peak Non Rep Surge Current Itsm 50hz
40A
Holding Current Max Ih
5mA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Description:
The NTE5408 through NTE5410 sensitive gate SCRs are designed to be driven directly with IC and
MOS devices. These SCRs feature proprietary, void−free glass−passivated chips and are hermeti-
cally sealed in TO5 type packages. These 4A devices are available in voltages up to 600V and with
a gate current of 200μA.
These NTE SCRs are reverse−blocking triode thyristors and may be switched from off−state to con-
duction by a current pulse applied to the gate terminal. The NTE5408 through NTE5410 are designed
for control applications in lighting, heating, cooling, and static switching relays.
Absolute Maximum Ratings:
Repetitive Peak Reverse Voltage (T
Repetitive Peak Off−State Voltage (T
RMS On−State Current (T
Peak Surge (Non−Repetitive) On−State Current (One Cycle at 50 or 60Hz), I
Peak Gate−Trigger Current (3μs Max), I
Peak Gate−Power Dissipation (I
Average Gate Power Dissipation, P
Operating Temperature Range, T
Storage Temperature Range, T
Typical Thermal Resistance, Junction−to−Case, R
NTE5408
NTE5409
NTE5410
NTE5408
NTE5409
NTE5410
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
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Silicon Controlled Rectifier (SCR)
C
= +75°C, Conduction Angle of 180°), I
3 Amp Sensitive Gate, TO5
stg
GT
NTE5408 thru NTE5410
opr
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
≤ I
G(AV)
C
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
GTM
= +100°C), V
= +100°C), V
GTM
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
for 3μs Max), P
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
thJC
RRM
DRXM
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
GM
. . . . . . . . . . . . . . . . . . . . . . . . . . .
T(RMS)
. . . . . . . . . . . . . . . . . . .
TSM
. . . . . . . . . . .
−40° to +100°C
−40° to +150°C
200mW
+5°C/W
200V
400V
600V
200V
400V
600V
20W
40A
4A
1A
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NTE5408 Summary of contents
Page 1
... Silicon Controlled Rectifier (SCR) Description: The NTE5408 through NTE5410 sensitive gate SCRs are designed to be driven directly with IC and MOS devices. These SCRs feature proprietary, void−free glass−passivated chips and are hermeti- cally sealed in TO5 type packages. These 4A devices are available in voltages up to 600V and with a gate current of 200μ ...
Page 2
Parameter Peak Off−State Current Maximum On−State Voltage DC Holding Current DC Gate−Trigger Current DC Gate−Trigger Voltage Gate Controlled Turn−On Time for Fusing Reference Critical Rate of Applied Forward Voltage C Symbol Test Conditions Max, ...