IRFR320TRRPBF Vishay, IRFR320TRRPBF Datasheet - Page 5

• Manufacturer Part Number: IRFR320TRRPBF
• Description: N CHANNEL MOSFET, 400V, 3.1A, D-PAK
• Manufacturer: Vishay

Specifications of IRFR320TRRPBF

• Transistor Polarity: N Channel
• Continuous Drain Current Id: 3.1A
• Drain Source Voltage Vds: 400V
• On Resistance Rds(on): 1.8ohm
• Rds(on) Test Voltage Vgs: 10V
• Leaded Process Compatible: Yes
• Configuration: Single
• Resistance Drain-source Rds (on): 1.8 Ohms
• Drain-source Breakdown Voltage: 400 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 3.1 A
• Power Dissipation: 2.5 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: DPAK
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Document Number: 91273
S10-1135-Rev. C, 10-May-10
Fig. 9 - Maximum Drain Current vs. Case Temperature
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
IRFR320, IRFU320, SiHFR320, SiHFU320
90 %
10 %
Fig. 10a - Switching Time Test Circuit
Fig. 10b - Switching Time Waveforms
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GS
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Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
g
10 V
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t
d(on)
V
DS
t
r
D.U.T.
Vishay Siliconix
R
D
t
d(off)
t
f
+
-
www.vishay.com
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