IRFR320TRRPBF Vishay, IRFR320TRRPBF Datasheet - Page 4

• Manufacturer Part Number: IRFR320TRRPBF
• Description: N CHANNEL MOSFET, 400V, 3.1A, D-PAK
• Manufacturer: Vishay

Specifications of IRFR320TRRPBF

• Transistor Polarity: N Channel
• Continuous Drain Current Id: 3.1A
• Drain Source Voltage Vds: 400V
• On Resistance Rds(on): 1.8ohm
• Rds(on) Test Voltage Vgs: 10V
• Leaded Process Compatible: Yes
• Configuration: Single
• Resistance Drain-source Rds (on): 1.8 Ohms
• Drain-source Breakdown Voltage: 400 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 3.1 A
• Power Dissipation: 2.5 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: DPAK
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IRFR320, IRFU320, SiHFR320, SiHFU320
Vishay Siliconix
Fig. 7 - Typical Source-Drain Diode Forward Voltage
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 8 - Maximum Safe Operating Area
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
www.vishay.com
Document Number: 91273
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S10-1135-Rev. C, 10-May-10