IRFP22N60K Vishay, IRFP22N60K Datasheet - Page 4

• Manufacturer Part Number: IRFP22N60K
• Description: N CHANNEL MOSFET, 600V, 22A, TO-247
• Manufacturer: Vishay

Specifications of IRFP22N60K

• Transistor Polarity: N Channel
• Continuous Drain Current Id: 22A
• Drain Source Voltage Vds: 600V
• On Resistance Rds(on): 280mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 5V
• Configuration: Single
• Resistance Drain-source Rds (on): 0.28 Ohms
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 22 A
• Power Dissipation: 370 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Package / Case: TO-247AC
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

IRFP22N60K, SiHFP22N60K
Vishay Siliconix
www.vishay.com
4
100000
10000
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
1000
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
100
10
20
16
12
8
4
0
1
0
I D = 22A
V DS , Drain-to-Source Voltage (V)
Q G Total Gate Charge (nC)
40
V GS = 0V,
C iss
SHORTED
C rss
C oss
10
V DS = 480V
VDS= 300V
VDS= 120V
= C ds + C gd
= C gd
Coss
Crss
Ciss
= C gs + C gd , C ds
80
f = 1 MHZ
100
120
160
1000
100.0
Fig. 7 - Typical Source-Drain Diode Forward Voltage
1000
10.0
100
1.0
0.1
0.1
10
Fig. 8 - Maximum Safe Operating Area
1
0.2
1
Tc = 25°C
Tj = 150°C
Single Pulse
T J = 150°C
V DS , Drain-toSource Voltage (V)
0.4
V SD , Source-toDrain Voltage (V)
10
0.6
OPERATION IN THIS AREA
LIMITED BY R DS (on)
T J = 25°C
100
0.8
S-81274-Rev. A, 16-Jun-08
Document Number: 91208
1.0
1000
10msec
100µsec
V GS = 0V
1msec
1.2
10000
1.4