IRFP22N60K Vishay, IRFP22N60K Datasheet - Page 3

• Manufacturer Part Number: IRFP22N60K
• Description: N CHANNEL MOSFET, 600V, 22A, TO-247
• Manufacturer: Vishay

Specifications of IRFP22N60K

• Transistor Polarity: N Channel
• Continuous Drain Current Id: 22A
• Drain Source Voltage Vds: 600V
• On Resistance Rds(on): 280mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 5V
• Configuration: Single
• Resistance Drain-source Rds (on): 0.28 Ohms
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 22 A
• Power Dissipation: 370 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Package / Case: TO-247AC
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 91208
S-81274-Rev. A, 16-Jun-08
0.001
100
0.1
0.01
100
10
0.1
1
10
1
0.1
0.1
TOP
BOTTOM 5.0V
TOP
BOTTOM 5.0V
Fig. 1 - Typical Output Characteristics
Fig. 2 - Typical Output Characteristics
12V
10V
8.0V
7.0V
6.0V
5.5V
15V
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
VGS
VGS
15V
12V
10V
8.0V
7.0V
6.0V
5.5V
1
1
5.0V
20µs PULSE WIDTH
Tj = 150°C
20µs PULSE WIDTH
Tj = 25°C
5.0V
10
10
100
100
100.00
10.00
1.00
0.10
0.01
IRFP22N60K, SiHFP22N60K
Fig. 4 - Normalized On-Resistance vs. Temperature
3.0
2.5
2.0
1.5
1.0
0.5
0.0
5.0
-60
I
D
T J = 150°C
Fig. 3 - Typical Transfer Characteristics
=
-40
22A
V GS , Gate-to-Source Voltage (V)
-20
6.0
T J = 25°C
T J , Junction Temperature (° C)
0
20
7.0
40
V DS = 50V
20µs PULSE WIDTH
60
Vishay Siliconix
8.0
80
100
V
9.0
www.vishay.com
120
GS
=
140
10V
10.0
160
3