IRFBC40LC Vishay, IRFBC40LC Datasheet - Page 3
![N CHANNEL MOSFET, 600V, 6.2A TO-220](/photos/5/29/52977/698-to-220ab_sml.jpg)
IRFBC40LC
Manufacturer Part Number
IRFBC40LC
Description
N CHANNEL MOSFET, 600V, 6.2A TO-220
Manufacturer
Vishay
Datasheet
1.IRFBC40LCPBF.pdf
(8 pages)
Specifications of IRFBC40LC
Transistor Polarity
N Channel
Continuous Drain Current Id
6.2A
Drain Source Voltage Vds
600V
On Resistance Rds(on)
1.2ohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
4V
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
1.2 Ohm @ 3.7A, 10V
Drain To Source Voltage (vdss)
600V
Current - Continuous Drain (id) @ 25° C
6.2A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
39nC @ 10V
Input Capacitance (ciss) @ Vds
1100pF @ 25V
Power - Max
125W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Configuration
Single
Resistance Drain-source Rds (on)
1.2 Ohms
Drain-source Breakdown Voltage
600 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
6.2 A
Power Dissipation
125 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant, Contains lead / RoHS non-compliant
Other names
*IRFBC40LC
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRFBC40LC
Manufacturer:
IR
Quantity:
12 500
Part Number:
IRFBC40LC
Manufacturer:
IR
Quantity:
20 000
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Document Number: 91114
S11-0515-Rev. C, 21-Mar-11
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
91114_01
91114_02
Fig. 2 - Typical Output Characteristics, T
10
10
Fig. 1 - Typical Output Characteristics, T
10
10
10
10
10
10
-1
-2
-1
-2
1
0
1
0
10
10
-2
-2
Top
Bottom
Top
Bottom
V
V
DS
DS ,
15 V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
4.5 V
15 V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
4.5 V
V
10
10
V
, Drain-to-Source Voltage (V)
GS
GS
Drain-to-Source Voltage (V)
-1
-1
10
10
0
0
20 µs Pulse Width
T
20 µs Pulse Width
T
C
C
=
=
10
10
25 °C
150 °C
1
1
This datasheet is subject to change without notice.
C
C
4.5 V
4.5 V
= 150 °C
= 25 °C
10
10
2
2
91114_03
91114_04
Fig. 4 - Normalized On-Resistance vs. Temperature
10
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
10
10
-1
1
0
- 60 - 40 - 20 0
4
IRFBC40LC, SiHFBC40LC
I
V
Fig. 3 - Typical Transfer Characteristics
D
GS
150
= 6.2 A
= 10 V
°
V
5
C
T
GS ,
J ,
25
Junction Temperature (°C)
Gate-to-Source Voltage (V)
°
C
6
20 40 60 80 100 120 140 160
7
www.vishay.com/doc?91000
20 µs Pulse Width
V
Vishay Siliconix
DS
8
=
100 V
9
www.vishay.com
10
3