IRFBC40LC Vishay, IRFBC40LC Datasheet - Page 2

• Manufacturer Part Number: IRFBC40LC
• Description: N CHANNEL MOSFET, 600V, 6.2A TO-220
• Manufacturer: Vishay

Specifications of IRFBC40LC

• Transistor Polarity: N Channel
• Continuous Drain Current Id: 6.2A
• Drain Source Voltage Vds: 600V
• On Resistance Rds(on): 1.2ohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 4V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.2 Ohm @ 3.7A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 6.2A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 39nC @ 10V
• Input Capacitance (ciss) @ Vds: 1100pF @ 25V
• Power - Max: 125W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Resistance Drain-source Rds (on): 1.2 Ohms
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 6.2 A
• Power Dissipation: 125 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant, Contains lead / RoHS non-compliant
• Other names: *IRFBC40LC

IRFBC40LC, SiHFBC40LC
Vishay Siliconix
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width  300 μs; duty cycle  2 %.
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2
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Ambient
Case-to-Sink, Flat, Greased Surface
Maximum Junction-to-Case (Drain)
SPECIFICATIONS (T
PARAMETER
Static
Drain-Source Breakdown Voltage
V
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Forward Turn-On Time
DS
Temperature Coefficient
J
= 25 °C, unless otherwise noted)
a
This datasheet is subject to change without notice.
SYMBOL
V
R
V
t
t
C
I
I
C
C
V
GS(th)
DS(on)
Q
Q
V
d(on)
d(off)
I
GSS
DSS
g
Q
Q
DS
L
L
t
SM
I
t
t
t
DS
oss
SD
on
rss
S
iss
gd
rr
fs
gs
r
f
D
S
g
rr
/T
J
SYMBOL
R
R
R
thCS
thJC
thJA
Between lead,
6 mm (0.25") from
package and center of
die contact
MOSFET symbol
showing the
integral reverse
p - n junction diode
T
J
V
V
V
R
= 25 °C, I
GS
GS
DS
T
Intrinsic turn-on time is negligible (turn-on is dominated by L
g
J
Reference to 25 °C, I
= 9.1 , R
= 25 °C, I
= 480 V, V
= 10 V
= 10 V
V
V
V
V
V
f = 1.0 MHz, see fig. 5
DS
TEST CONDITIONS
DS
DS
DD
GS
= 100 V, I
F
= 600 V, V
= V
= 300 V, I
= 0 V, I
= 6.2 A, dI/dt = 100 A/μs
V
V
V
S
GS
DS
D
GS
GS
GS
= 6.2 A, V
I
TYP.
= 47, see fig. 10
0.50
D
, I
= 20
= 25 V
= 0 V
= 0 V, T
-
-
= 6.2 A, V
D
D
see fig. 6 and 13
= 250 μA
D
= 250 μA
D
GS
= 3.7 A
I
= 6.2 A
D
D
= 0 V
= 3.7 A
GS
J
= 1 mA
G
= 125 °C
G
DS
= 0 V
b
= 360 V,
b
D
S
b
b
D
S
b
b
MAX.
1.0
62
-
MIN.
600
2.0
3.7
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
S11-0515-Rev. C, 21-Mar-11
www.vishay.com/doc?91000
Document Number: 91114
TYP.
1100
0.70
140
440
4.5
7.5
2.1
15
12
20
27
17
-
-
-
-
-
-
-
-
-
-
-
-
-
MAX.
± 100
100
500
680
4.0
1.2
6.2
1.5
3.2
S
UNIT
°C/W
39
10
19
25
-
-
-
-
-
-
-
-
-
-
-
-
and L
D
UNIT
V/°C
)
nA
μA
nC
nH
μC
pF
ns
ns

V
V
S
A
V