IRF734PBF Vishay, IRF734PBF Datasheet - Page 6

• Manufacturer Part Number: IRF734PBF
• Description: N CH MOSFET, 450V, 4.9A, TO-220AB
• Manufacturer: Vishay

Specifications of IRF734PBF

• Transistor Polarity: N Channel
• Continuous Drain Current Id: 4.9A
• Drain Source Voltage Vds: 450V
• On Resistance Rds(on): 1.2ohm
• Rds(on) Test Voltage Vgs: 10V
• Leaded Process Compatible: Yes
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.2 Ohm @ 2.9A, 10V
• Drain To Source Voltage (vdss): 450V
• Current - Continuous Drain (id) @ 25° C: 4.9A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 45nC @ 10V
• Input Capacitance (ciss) @ Vds: 680pF @ 25V
• Power - Max: 74W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Resistance Drain-source Rds (on): 1.2 Ohms
• Drain-source Breakdown Voltage: 450 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 4.9 A
• Power Dissipation: 74 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: *IRF734PBF

IRF734, SiHF734
Vishay Siliconix
www.vishay.com
6
10 V
Fig. 13a - Basic Gate Charge Waveform
V
G
Q
GS
Charge
Q
Q
GD
G
91049_12c
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
600
400
200
800
0
25
V
DD
Starting T
= 50 V
50
J
, Junction Temperature (°C)
75
100
Top
Bottom
125
12 V
2.2 A
3.1 A
4.9 A
V
Fig. 13b - Gate Charge Test Circuit
I
GS
D
Same type as D.U.T.
150
Current regulator
0.2 µF
Current sampling resistors
3 mA
50 kΩ
0.3 µF
I
G
S-82998-Rev. A, 12-Jan-08
Document Number: 91049
D.U.T.
I
D
+
-
V
DS