IRF734PBF Vishay, IRF734PBF Datasheet - Page 3

• Manufacturer Part Number: IRF734PBF
• Description: N CH MOSFET, 450V, 4.9A, TO-220AB
• Manufacturer: Vishay

Specifications of IRF734PBF

• Transistor Polarity: N Channel
• Continuous Drain Current Id: 4.9A
• Drain Source Voltage Vds: 450V
• On Resistance Rds(on): 1.2ohm
• Rds(on) Test Voltage Vgs: 10V
• Leaded Process Compatible: Yes
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.2 Ohm @ 2.9A, 10V
• Drain To Source Voltage (vdss): 450V
• Current - Continuous Drain (id) @ 25° C: 4.9A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 45nC @ 10V
• Input Capacitance (ciss) @ Vds: 680pF @ 25V
• Power - Max: 74W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Resistance Drain-source Rds (on): 1.2 Ohms
• Drain-source Breakdown Voltage: 450 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 4.9 A
• Power Dissipation: 74 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: *IRF734PBF

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 91049
S-82998-Rev. A, 12-Jan-08
91049_01
91049_02
Fig. 2 - Typical Output Characteristics, T
Fig. 1 - Typical Output Characteristics, T
10
10
10
10
1
0
1
0
Top
Bottom
Top
Bottom
10
V
V
DS
10
0
DS ,
15 V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
4.5 V
V
15 V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
4.5 V
0
GS
, Drain-to-Source Voltage (V)
V
GS
Drain-to-Source Voltage (V)
10
20 µs Pulse Width
T
20 µs Pulse Width
T
10
C
1
C
=
1
=
25 °C
150 °C
C
4.5 V
C
4.5 V
= 150 °C
= 25 °C
91049_04
91049_03
Fig. 4 - Normalized On-Resistance vs. Temperature
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
10
10
1
0
- 60 - 40 - 20 0
4
I
V
150
D
Fig. 3 - Typical Transfer Characteristics
GS
= 4.9 A
= 10 V
°
V
C
5
T
GS ,
J ,
25
Junction Temperature (°C)
Gate-to-Source Voltage (V)
°
C
6
20 40 60 80 100 120 140 160
IRF734, SiHF734
7
Vishay Siliconix
20 µs Pulse Width
V
DS
8
=
50 V
9
www.vishay.com
10
3