SUP53P06-20-E3 Vishay, SUP53P06-20-E3 Datasheet - Page 4

• Manufacturer Part Number: SUP53P06-20-E3
• Description: MOSFET, P, TO-220
• Manufacturer: Vishay

Specifications of SUP53P06-20-E3

• Transistor Polarity: P Channel
• Continuous Drain Current Id: 53A
• Drain Source Voltage Vds: -60V
• On Resistance Rds(on): 19.5mohm
• Rds(on) Test Voltage Vgs: -10V
• Voltage Vgs Max: -20V
• Operating Temperature Range: -55°C
• Configuration: Single
• Resistance Drain-source Rds (on): 0.0195 Ohms
• Drain-source Breakdown Voltage: - 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 9.2 A
• Power Dissipation: 3.1 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Package / Case: TO-220AB
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

SUP53P06-20
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
1000
100
100
10
10
0.1
10
8
6
4
2
0
1
0.0
0.0001
1
0
Single Pulse Avalanche Current Capability
I
D
Source-Drain Diode Forward Voltage
= 55 A
I
AV
0.001
(A) at T
V
0.3
20
SD
Q
T
g
J
- Source-to-Drain Voltage (V)
- Total Gate Charge (nC)
V
= 150 °C
J
DS
Gate Charge
= 150 °C
vs. Time
= 20 V
T
0.01
in
0.6
40
I
AV
- (s)
(A) at T
V
DS
J
= 25 °C
0.9
0.1
60
= 30 V
T
J
= 25 °C
New Product
1.2
80
1
0.10
0.08
0.06
0.04
0.02
0.00
2.0
1.7
1.4
1.1
0.8
0.5
75
72
69
66
63
60
- 50
- 50
0
Drain-Source Breakdown Voltage vs. Junction
I
On-Resistance vs. Gate-to-Source Voltage
D
I
I
D
On-Resistance vs. Gate-to-Source Voltage
D
= 20 A
= 10 mA
- 25
- 25
= 20 A
2
V
GS
T
0
0
J
- Gate-to-Source Voltage (V)
- Junction Temperature (°C)
T
J
25
- Temperature (°C)
25
Temperature
4
50
50
S-80897-Rev. A, 21-Apr-08
V
Document Number: 68633
GS
6
= 10 V
75
75
V
GS
100
T
T
100
J
J
= 4.5 V
= 25 °C
= 150 °C
8
125
125
150
150
10