SUP53P06-20 Vishay, SUP53P06-20 Datasheet
SUP53P06-20
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SUP53P06-20 Summary of contents
Page 1
... 0.025 4 O-220AB DRAIN connected Ordering Information: SUP53P06-20-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Avalanche Current Pulse Single Pulse Avalanche Energy ...
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... SUP53P06-20 Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage V Temperature Coefficient DS V Temperature Coefficient GS(th) Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance ...
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... 100 ° 5000 4000 3000 2000 1000 60 80 100 SUP53P06-20 Vishay Siliconix 125 ° ° ° Gate-to-Source Voltage (V) GS Transfer Characteristics ° ...
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... SUP53P06-20 Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Total Gate Charge (nC) g Gate Charge 100 T = 150 ° 0.0 0.3 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 1000 100 ( 150 ° ...
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... Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case SUP53P06-20 Vishay Siliconix 100 125 T - Case Temperature (°C) C Max. Drain Current vs. Case Temperature Limited DS(on) BVDSS °C C Limited ...
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... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...