NTE2990 NTE ELECTRONICS, NTE2990 Datasheet - Page 2

• Manufacturer Part Number: NTE2990
• Description: MOSFET PWR P-CH 250V 6A
• Manufacturer: NTE ELECTRONICS

Electrical Characteristics: (T
Drain−Source On−State Resistance
Gate Threshold Voltage
Forward Transfer Admittance
Zero Gate Voltage Drain Current
Gate−Source Leakage Current
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn−On Time
Rise Time
Turn−Off Time
Fall Time
Total Gate Charge
Gate−Source Charge
Gate−Drain (“Miller”) Charge
Source−Drain Diode Ratings and Characteristics: (T
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovered Charge
Parameter
.402 (10.2) Max
.224 (5.7) Max
(17.0)
(13.5)
.669
.531
Max
Min
.100 (2.54)
(7.5)
.295
A
= +25 C unless otherwise specified)
G
Symbol
R
V
V
t
t
I
I
C
C
DS(on)
GS(th)
C
Q
Q
d(on)
d(off)
DSS
GSS
Q
g
Q
DSF
t
oss
t
t
D
rss
iss
rr
fs
gs
gd
r
f
rr
g
S
I
I
I
V
V
V
V
V
R
R
V
I
I
di/dt = 50A/ s
D
D
D
DR
DR
DS
GS
DS
DD
GS(on)
DD
L
L
= 3A, V
= 1mA, V
= 3A, V
= 42
= 42
= 6A, V
= 6A, V
= 250V, V
= 10V, V
= 125V, I
= 200V, V
= 30V, V
A
.059 (1.5) Max
= +25 C unless otherwise specified)
= 10V, R
.122 (3.1)
Test Conditions
GS
DS
(4.2)
.165
Dia
GS
GS
DS
= 10V
GS
= 10V
D
GS
GS
DS
= 0V
= 0V,
= 10V
= 3A,
= 0V, f = 1MHz
G
= 0V
= 0V
= 10V, I
= 10 ,
D
= 6A
.173 (4.4) Max
.114 (2.9) Max
Min
4.0
2.0
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
1040
0.55
23.1
12.9
0.92
Typ
360
155
930
4.8
3.5
7.1
70
25
16
47
14
−
−
Max
0.80
100
5.5
100
−
−
−
−
−
−
−
−
−
−
−
−
−
−
Unit
nC
nC
nC
nC
nA
pF
pF
pF
ns
ns
ns
ns
ns
V
S
V
A