NTE2990 NTE ELECTRONICS, NTE2990 Datasheet

no-image

NTE2990

Manufacturer Part Number
NTE2990
Description
MOSFET PWR P-CH 250V 6A
Manufacturer
NTE ELECTRONICS
Datasheet
Features:
D Low Drain−Source On−Resistance
D Low Input Capacitance
D High Avalanche Capability Ratings
Applications:
D Switching Regulators
D UPS
D DC−DC Converters
D General Purpose Power Amplifier
Absolute Maximum Ratings: (T
Drain−Source Voltage, V
Gate−Source Voltage, V
Drain Current, I
Maximum Power Dissipation, P
Single Avalanche Current (Note 2), I
Single Avalanche Energy (Note 2), E
Channel Temperature, T
Storage Temperature Range, T
Thermal Resistance, Junction−to−Ambient, R
Thermal Resistance, Junction−to−Case, R
Note 1. Pulse Width
Note 2. Starting T
Continuous
Pulsed (Note 1)
T
T
A
C
= +25 C
= +25 C
D
ch
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= +25 C, R
10 s, Duty Cycle
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
ch
GSS
DSS
P−Channel, Enhancement Mode
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
stg
D
G
A
= 25 , V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= +25 C unless otherwise specified)
High Speed Switch
AS
AS
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
thJC
NTE2990
MOSFET
1%.
GS
thJA
= −20V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
0.
−55 to +150 C
62.5 C/W
2.77 C/W
+150 C
180mJ
250V
2.0W
35W
30V
24A
6A
6A

Related parts for NTE2990

NTE2990 Summary of contents

Page 1

... Storage Temperature Range, T Thermal Resistance, Junction−to−Ambient, R Thermal Resistance, Junction−to−Case, R Note 1. Pulse Width 10 s, Duty Cycle Note 2. Starting NTE2990 MOSFET High Speed Switch = +25 C unless otherwise specified ...

Page 2

Electrical Characteristics: (T Parameter Drain−Source On−State Resistance Gate Threshold Voltage Forward Transfer Admittance Zero Gate Voltage Drain Current Gate−Source Leakage Current Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn−On Time Rise Time Turn−Off Time Fall Time Total Gate Charge Gate−Source ...

Related keywords