MTM861270LBF Panasonic, MTM861270LBF Datasheet - Page 3

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MTM861270LBF

Manufacturer Part Number
MTM861270LBF
Description
MOSFET, P-CH, 20V, 2A, WSSMINI6
Manufacturer
Panasonic
Datasheet

Specifications of MTM861270LBF

Transistor Polarity
P Channel
Drain Source Voltage Vds
-20V
On Resistance Rds(on)
120mohm
Rds(on) Test Voltage Vgs
-4V
Voltage Vgs Max
10V
Transistor Case Style
WSSMINI6-F1
No. Of Pins
6
Svhc
No SVHC (18-Jun-2010)
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MTM861270LBF
Manufacturer:
PANAS0NIC
Quantity:
20 000
− 0.10
− 0.08
− 0.06
− 0.04
− 0.02
10
10
400
300
400
100
10
−10
0
1
3
2
0
0
0
−3
Drain-source voltage V
C
Drain-source voltage V
C
oss
C
rss
C
MTM86127_ R
iss
− 0.1
Drain current I
MTM86127_ C
MTM86127_ I
V
iss
−5
DS
−1.1 V
−10
−1.0 V
V
, C
R
= −4.5 V
GS
I
−2
DS(on)
oss
D
−2.5 V
−1.8 V
= −1.8 V
 V
− 0.2
−10
, C
 I
rss
−2.5 V −4.0 V
DS
DS(on)
−10
D
 V
X
D
D
-V
- V
− 0.3
−1
−15
(A)
DS
DS
DS
DS
-I
T
T
DS
a
D
a
=
=
(V)
(V)
25°C
25°C
This product complies with the RoHS Directive (EU 2002/95/EC).
− 0.4
−20
−1
1 000
800
600
400
200
10
10
10
10
10
10
10
0
−1
−2
−3
−4
−5
−6
1
0
0
V
DS
Ambient temperature T
Gate-source voltage V
= −10 V
SJF00092BED
MTM86127_ P
40
MTM86127_ I
25°C
0.4
T
I
a
P
D
=
(1) Ceramic substrate
(2) Without substrate
D
 V
85°C
(40 mm × 38 mm × 0.2 mm)
80
 T
0.8
GS
−30°C
a
D
D
-V
-T
−1.2
120
GS
GS
a
a
(°C)
(V)
−1.6
160
−10
−10
−10
10
10
10
10
10
−1
−1
−2
10
5
4
3
2
0
Area of safe operation for the MTM86127
−2
Operation in this
I
T
Glass epoxy board
(25.4 mm× 25.4 mm × t0.8 mm)
coated with copper foil,
which has more than 300 mm
DP
area is limited
Drain-source voltage V
a
Gate-source voltage V
= 25°C
by R
= −8.0 A
MTM86127_ R
−2
DS(on)
10
Safe operation area
−1
R
DS(on)
−4
1 s
1
 V
100 ms
2
MTM86127
−6
.
DS(on)
10 ms
GS
-V
T
1 ms
10
GS
DS
a
−8
GS
=
(V)
25°C
(V)
−10
100
3

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