MTM861270LBF Panasonic, MTM861270LBF Datasheet

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MTM861270LBF

Manufacturer Part Number
MTM861270LBF
Description
MOSFET, P-CH, 20V, 2A, WSSMINI6
Manufacturer
Panasonic
Datasheet

Specifications of MTM861270LBF

Transistor Polarity
P Channel
Drain Source Voltage Vds
-20V
On Resistance Rds(on)
120mohm
Rds(on) Test Voltage Vgs
-4V
Voltage Vgs Max
10V
Transistor Case Style
WSSMINI6-F1
No. Of Pins
6
Svhc
No SVHC (18-Jun-2010)
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MTM861270LBF
Manufacturer:
PANAS0NIC
Quantity:
20 000
MTM86127
Silicon P-channel MOS FET
For DC-DC converter circuits
 Overview
 Features
 Packaging
 Absolute Maximum Ratings T
Note) * : Measuring on ceramic substrate at 40 mm × 38 mm × 0.2 mm
Publication date: June 2010
 Low drain-source ON resistance: R
 Small package: WSSMini6-F1
 Low drive voltage: 1.8 V drive
 Contributes to miniaturization of sets, reduction of component count.
 Eco-friendly Halogen-free package
Embossed type (Thermo-compression sealing): 10000 pcs / reel (standard)
Drain-source surrender voltage
Gate-source surrender voltage
Drain current
Peak drain current
Power dissipation
Channel temperature
Storage temperature
MTM86127 is the low on resistance P-channel MOS FET designed for
DC-DC converter circuits.
P
D
absolute maximum rating without a heat shink: 150 mW
Parameter
*
DS(on)
a
= 25°C
This product complies with the RoHS Directive (EU 2002/95/EC).
typ. = 140 mW (V
Symbol
V
V
T
I
T
P
I
DSS
GSS
DP
D
stg
ch
D
–55 to +150
Rating
-2.0
-8.0
-20
±10
540
150
GS
SJF00092BED
= -1.8 V)
Unit
mW
°C
°C
V
V
A
A
 Package
 Marking Symbol: MK
 Internal Connection
 Code
 Pin Name
WSSMini6-F1
1: Drain
2: Drain
3: Gate
(D)
(D)
6
1
(D)
(D)
5
2
4: Source
5: Drain
6: Drain
(S)
(G)
4
3
1

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MTM861270LBF Summary of contents

Page 1

This product complies with the RoHS Directive (EU 2002/95/EC). MTM86127 Silicon P-channel MOS FET For DC-DC converter circuits  Overview MTM86127 is the low on resistance P-channel MOS FET designed for DC-DC converter circuits.  Features  Low drain-source ON ...

Page 2

This product complies with the RoHS Directive (EU 2002/95/EC). MTM86127  Electrical Characteristics T = 25°C±3°C a Parameter Drain-source surrender voltage Drain-source cutoff current Gate-source cutoff current Gate threshold voltage * 1 Drain-source ON resistance Drain-source ON ...

Page 3

This product complies with the RoHS Directive (EU 2002/95/EC). MTM86127_  − 0. 25° −4 − 0.08 −2.5 V −1.8 V − 0.06 −1.1 V ...

Page 4

This product complies with the RoHS Directive (EU 2002/95/EC). MTM86127 WSSMini6-F1 1.60 +0.05 0.20 −0. (0.50) 1.00 5° 4 ±0. (0.50) ±0.05 SJF00092BED Unit: mm +0.05 0.13 −0.03 ...

Page 5

... The technical information described in this book is intended only to show the main characteristics and application circuit examples of the products. No license is granted in and to any intellectual property right or other right owned by Panasonic Corporation or any other company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other company which may arise as a result of the use of technical information described in this book ...

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