IXFH76N07-11 IXYS SEMICONDUCTOR, IXFH76N07-11 Datasheet - Page 2

• Manufacturer Part Number: IXFH76N07-11
• Description: MOSFET, N, TO-247
• Manufacturer: IXYS SEMICONDUCTOR

Specifications of IXFH76N07-11

• Transistor Polarity: N Channel
• Continuous Drain Current Id: 76A
• Drain Source Voltage Vds: 70V
• On Resistance Rds(on): 11mohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 20V
• Operating Temperature Range: -55°C To
• Threshold Voltage Vgs Typ: 3.4V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

© 2000 IXYS All rights reserved
Symbol
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
Source-Drain Diode
Symbol
I
I
V
t
S
SM
d(on)
d(off)
f
r
rr
fs
SD
oss
thJC
thCK
iss
rss
g(on)
gs
gd
Test Conditions
V
Test Conditions
V
Repetitive; pulse width limited by T
I
Pulse test, t £ 300 ms, duty cycle d £ 2 %
I
V
F
F
DS
GS
R
= I
= 25 A, -di/dt = 100 A/ms, T
= 25 V
= 0 V
S
= 10 V; I
V
V
R
V
, V
GS
GS
GS
G
= 1 W (External)
GS
= 0 V, V
= 10 V, V
= 10 V, V
= 0 V,
D
= 40 A, pulse test
DS
DS
DS
= 25 V, f = 1 MHz
= 50 V, I
= 0.5 • V
T
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,850,072
D
J
J
DSS
(T
(T
=
= 125°C
= 30 A
, I
J
J
JM
= 25°C, unless otherwise specified)
= 25°C, unless otherwise specified)
D
25°C
= 40 A
4,881,106
4,931,844
min.
min.
30
Characteristic Values
Characteristic Values
5,017,508
5,034,796
4400
2000
1200
typ.
typ.
0.25
150
IXFH 76 N06-11
IXFH 76 N06-12
130
240
120
40
40
70
55
30
0.42
max.
max.
5,049,961
5,063,307
304
250 ns
1.5
76
K/W
K/W
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
ns
S
A
A
V
5,187,117
5,237,481
TO-247 AD (IXFH) Outline
5,486,715
5,381,025
Dim. Millimeter
A
B
C
D
E
F
G
H
J
K
L
M
N
19.81 20.32 0.780 0.800
20.80 21.46 0.819 0.845
15.75 16.26 0.610 0.640
Min. Max.
3.55 3.65 0.140 0.144
4.32 5.49 0.170 0.216
1.65 2.13 0.065 0.084
10.8 11.0 0.426 0.433
5.4
1.0
4.7
0.4
1.5 2.49 0.087 0.102
-
IXFH 76 N07-11
IXFH 76 N07-12
6.2 0.212 0.244
4.5 -
1.4 0.040 0.055
5.3 0.185 0.209
0.8 0.016 0.031
Min.
Inches
0.177
Max.
2 - 4