IXFH76N07-11 IXYS SEMICONDUCTOR, IXFH76N07-11 Datasheet

IXFH76N07-11

Manufacturer Part Number

IXFH76N07-11

Description

MOSFET, N, TO-247

Manufacturer

IXYS SEMICONDUCTOR

Datasheet

1.IXFH76N07-12.pdf (4 pages)

Specifications of IXFH76N07-11

Transistor Polarity

N Channel

Continuous Drain Current Id

76A

Drain Source Voltage Vds

70V

On Resistance Rds(on)

11mohm

Rds(on) Test Voltage Vgs

10V

Voltage Vgs Max

20V

Operating Temperature Range

-55Â°C To

Threshold Voltage Vgs Typ

3.4V

Rohs Compliant

Yes

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

IXFH76N07-11

Manufacturer:

Quantity:

20 000

Company:

Meier Automation Equipment Co., Limited

Part Number:

IXFH76N07-11

Manufacturer:

IXYS/艾赛斯

Quantity:

20 000

Current page: 1 of 4
Download datasheet (81Kb)

HiPerFET

Power MOSFETs

N-Channel Enhancement Mode

High dv/dt, Low t

Preliminary data sheet

Symbol

dv/dt

Weight

Symbol

IXYS reserves the right to change limits, test conditions, and dimensions.

D25

D119

GSS

DSS

stg

DGR

DSS

GSM

DSS

GS(th)

DS(on)

Test Conditions

Continuous

Transient

1.6 mm (0.062 in.) from case for 10 s

Mounting torque

Test Conditions

Pulse test, t £ 300 ms, duty cycle d £ 2 %

£ 150°C, R

= 25°C to 175°C

= 25°C to 175°C; R

= 25°C (Chip capability = 125 A)

= 119°C, limited by external leads

= 25°C, pulse width limited by T

= 25°C

£ I

= 25°C

= 0 V, I

= V

= ±20 V

= 0.8 • V

= 0 V

= 10 V, I

, di/dt £ 100 A/ms, V

, HDMOS

, I

= 250 mA

DSS

= 4 mA

, V

= 40 A

= 2 W

= 0

= 10 kW

Family

N06

N07

76 N06/N07-11

76 N06/N07-12

£ V

= 25°C

= 125°C

DSS

= 25°C, unless otherwise specified)

N06

N07

N06

N07

min.

IXFH 76 N06-11

IXFH 76 N06-12

IXFH 76 N07-11

IXFH 76 N07-12

2.0

Characteristic Values

-55 ... +175

-55 ... +150

Maximum Ratings

typ.

1.15/10 Nm/lb.in.

±20

±30

304

100

360

175

300

max.

±100

100

500

3.4

V/ns

°C

TO-247 AD

G = Gate,

S = Source,

Features

Applications

Advantages

International standard package

JEDEC TO-247 AD

Low R

Rugged polysilicon gate cell structure

Unclamped Inductive Switching (UIS)

rated

Low package inductance

- easy to drive and to protect

Fast intrinsic Rectifier

DC-DC converters

Synchronous rectification

Battery chargers

Switched-mode and resonant-mode

power supplies

DC choppers

Temperature and lighting controls

Low voltage relays

Easy to mount with 1 screw

(isolated mounting screw hole)

Space savings

High power density

60 V

70 V

DSS

DS (on)

HDMOS

D = Drain,

TAB = Drain

76 A 11 mW

76 A 12 mW

76 A 11 mW

76 A 12 mW

D25

process

92785H (12/98)

(TAB)

DS(on)

1 - 4

Related parts for IXFH76N07-11

IXFH76N07-11 Summary of contents

Page 1

TM HiPerFET Power MOSFETs N-Channel Enhancement Mode High dv/dt, Low t , HDMOS rr Preliminary data sheet Symbol Test Conditions 25°C to 175°C DSS 25°C to 175°C; R DGR J V Continuous GS ...

Page 2

Symbol Test Conditions pulse test iss MHz oss rss t d(on) t ...

Page 3

Fig.1 Output Characteristics 100 V =10V ° 0.0 0.5 1 Volts DS Fig vs. Drain Current ds(on) 1.4 ...

Page 4

Fig. 7 Gate Charge 40V 38A 1mA 100 150 200 Gate Charge - nCoulombs Fig. 9 Capacitance Curves 6000 5000 ...

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