BUK6E3R4-40C NXP Semiconductors, BUK6E3R4-40C Datasheet - Page 11

• Manufacturer Part Number: BUK6E3R4-40C
• Description: MOSFET,N CH,40V,100A,SOT226
• Manufacturer: NXP Semiconductors

Specifications of BUK6E3R4-40C

• Transistor Polarity: N Channel
• Drain Source Voltage Vds: 40V
• On Resistance Rds(on): 3.05mohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 16V
• Operating Temperature Range: -55°C To +175°C
• Transistor Case: RoHS Compliant
• Transistor Case Style: I2-PAK
• Rohs Compliant: Yes

NXP Semiconductors
8. Revision history
Table 7.
BUK6E3R4-40C
Product data sheet
Document ID
BUK6E3R4-40C v.3
Modifications:
BUK6E3R4-40C v.2
Revision history
Release date
20101014
20100621
•
Status changed from objective to product.
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 14 October 2010
Data sheet status
Product data sheet
Objective data sheet
N-channel TrenchMOS intermediate level FET
Change notice
-
-
BUK6E3R4-40C
Supersedes
BUK6E3R4-40C v.2
BUK6E3R4-40C v.1
© NXP B.V. 2010. All rights reserved.
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