BUK6E3R2-55C NXP Semiconductors, BUK6E3R2-55C Datasheet - Page 10

• Manufacturer Part Number: BUK6E3R2-55C
• Description: MOSFET,N CH,55V,120A,SOT226
• Manufacturer: NXP Semiconductors

Specifications of BUK6E3R2-55C

• Transistor Polarity: N Channel
• Drain Source Voltage Vds: 55V
• On Resistance Rds(on): 2.7mohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 16V
• Operating Temperature Range: -55°C To +175°C
• Transistor Case: RoHS Compliant
• Transistor Case Style: I2-PAK
• Rohs Compliant: Yes

NXP Semiconductors
7. Package outline
Fig 17. Package outline SOT226 (I2PAK)
BUK6E3R2-55C
Product data sheet
Plastic single-ended package (I2PAK); low-profile 3-lead TO-262
DIMENSIONS (mm are the original dimensions)
UNIT
mm
OUTLINE
VERSION
SOT226
4.5
4.1
A
1.40
1.27
A
1
0.85
0.60
b
IEC
D
L
b
1.3
1.0
1
D
1
b
1
0.7
0.4
c
All information provided in this document is subject to legal disclaimers.
TO-262
JEDEC
1
max
e
11
D
E
REFERENCES
Rev. 01 — 6 September 2010
2
e
1.6
1.2
D
1
3
0
b
10.3
9.7
E
L
JEITA
scale
1
5
2.54
e
10 mm
15.0
13.5
N-channel TrenchMOS intermediate level FET
L
mounting
base
3.30
2.79
A
L
1
1
Q
2.6
2.2
Q
A
BUK6E3R2-55C
PROJECTION
EUROPEAN
c
© NXP B.V. 2010. All rights reserved.
ISSUE DATE
06-02-14
09-08-25
SOT226
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