BUK6E2R3-40C NXP Semiconductors, BUK6E2R3-40C Datasheet - Page 10

• Manufacturer Part Number: BUK6E2R3-40C
• Description: MOSFET,N CH,40V,120A,SOT226
• Manufacturer: NXP Semiconductors

Specifications of BUK6E2R3-40C

• Transistor Polarity: N Channel
• Drain Source Voltage Vds: 40V
• On Resistance Rds(on): 2mohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 16V
• Operating Temperature Range: -55°C To +175°C
• Transistor Case: RoHS Compliant
• Transistor Case Style: I2-PAK
• Rohs Compliant: Yes

NXP Semiconductors
BUK6E2R3-40C
Product data sheet
Fig 16. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values
(pF)
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All information provided in this document is subject to legal disclaimers.
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Rev. 1 — 18 August 2010
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N-channel TrenchMOS intermediate level FET
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BUK6E2R3-40C
© NXP B.V. 2010. All rights reserved.
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