BUK664R4-55C NXP Semiconductors, BUK664R4-55C Datasheet
BUK664R4-55C
Specifications of BUK664R4-55C
Related parts for BUK664R4-55C
BUK664R4-55C Summary of contents
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... BUK664R4-55C N-channel TrenchMOS intermediate level FET Rev. 03 — 21 December 2010 1. Product profile 1.1 General description Intermediate level N-channel enhancement mode Field-Effect Transistor (FET plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. ...
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... see Figure Simplified outline SOT404 (D2PAK) Description plastic single-ended surface-mounted package (D2PAK); 3 leads (one lead cropped) All information provided in this document is subject to legal disclaimers. Rev. 03 — 21 December 2010 BUK664R4-55C N-channel TrenchMOS intermediate level FET Min ≤ sup = 18; see ...
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... Figure °C; see Figure °C mb ≤ 10 µs; T pulsed ° ≤ 100 sup °C GS j(init) All information provided in this document is subject to legal disclaimers. Rev. 03 — 21 December 2010 BUK664R4-55C Min Max - 55 [1] -16 16 [2] -20 20 [3] Figure 1 - 100 Figure 550 - 204 -55 175 -55 175 [3] ...
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... T (°C) mb Fig 2. Normalized total power dissipation as a function of mounting base temperature Limit DSon All information provided in this document is subject to legal disclaimers. Rev. 03 — 21 December 2010 BUK664R4-55C 0 50 100 150 T 003aae707 = 10 μ (V) DS © NXP B.V. 2010. All rights reserved. 03aa16 200 (° ...
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... Transient thermal impedance from junction to mounting base as a function of pulse duration BUK664R4-55C Product data sheet N-channel TrenchMOS intermediate level FET Conditions see Figure 4 −4 − All information provided in this document is subject to legal disclaimers. Rev. 03 — 21 December 2010 BUK664R4-55C Min Typ Max - - 0.74 003aae531 t P δ ...
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... Figure 16; j see Figure see Figure 18; see Figure see Figure 17; see Figure 18 All information provided in this document is subject to legal disclaimers. Rev. 03 — 21 December 2010 BUK664R4-55C Min Typ Max = 25 ° -55 ° -55 ° °C; 1.8 2.3 2.8 = 175 °C; 0 °C; ...
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... 003aae708 250 I D (A) 200 150 100 (A) D Fig 6. Output characteristics: drain current as a function of drain-source voltage; typical values All information provided in this document is subject to legal disclaimers. Rev. 03 — 21 December 2010 BUK664R4-55C Min Typ = 31.5 - 5800 - 550 - 380 = 252 - 116 - 7 ° ...
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... V (V) GS Fig 8. 003aad806 V max (V) GS Fig 10. Gate-source threshold voltage as a function of All information provided in this document is subject to legal disclaimers. Rev. 03 — 21 December 2010 BUK664R4-55C N-channel TrenchMOS intermediate level FET 20 DSon Drain-source on-state resistance as a function of gate-source voltage; typical values 4 GS(th) (V) ...
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... Fig 12. Sub-threshold drain current as a function of 003aaf017 V ( DSon (mΩ) 3.6 3.8 4.0 4.5 10 (A) D Fig 14. Drain-source on-state resistance as a function All information provided in this document is subject to legal disclaimers. Rev. 03 — 21 December 2010 BUK664R4-55C N-channel TrenchMOS intermediate level FET - min typ - gate-source voltage 16 4.0 V (V) = 3.8 GS ...
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... BUK664R4-55C Product data sheet 003aad803 120 180 T (°C) j Fig 16. Gate-source voltage as a function of gate 003aaa508 Fig 18. Gate-source voltage as a function of gate All information provided in this document is subject to legal disclaimers. Rev. 03 — 21 December 2010 BUK664R4-55C N-channel TrenchMOS intermediate level FET (V) 15V 8 24V ...
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... C rss ( Fig 20. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values All information provided in this document is subject to legal disclaimers. Rev. 03 — 21 December 2010 BUK664R4-55C 003aae716 = 175 ° 0.4 0 © NXP B.V. 2010. All rights reserved °C j 1.2 ...
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... REFERENCES JEDEC JEITA All information provided in this document is subject to legal disclaimers. Rev. 03 — 21 December 2010 BUK664R4-55C mounting base 2.60 2.20 EUROPEAN ISSUE DATE PROJECTION 05-02-11 06-03-16 © NXP B.V. 2010. All rights reserved. ...
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... N-channel TrenchMOS intermediate level FET Data sheet status Change notice Product data sheet - Objective data sheet - All information provided in this document is subject to legal disclaimers. Rev. 03 — 21 December 2010 BUK664R4-55C Supersedes BUK664R4-55C v.2 BUK664R4-55C v.1 © NXP B.V. 2010. All rights reserved ...
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... In case an individual All information provided in this document is subject to legal disclaimers. Rev. 03 — 21 December 2010 BUK664R4-55C © NXP B.V. 2010. All rights reserved ...
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... TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 03 — 21 December 2010 BUK664R4-55C Trademarks © NXP B.V. 2010. All rights reserved ...
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... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2010. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 21 December 2010 Document identifier: BUK664R4-55C ...