BUK663R7-75C NXP Semiconductors, BUK663R7-75C Datasheet - Page 7

• Manufacturer Part Number: BUK663R7-75C
• Description: MOSFET,N CH,75V,120A,SOT404
• Manufacturer: NXP Semiconductors

Specifications of BUK663R7-75C

• Transistor Polarity: N Channel
• Drain Source Voltage Vds: 75V
• On Resistance Rds(on): 3.4mohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 16V
• Operating Temperature Range: -55°C To +175°C
• Transistor Case: RoHS Compliant
• Transistor Case Style: D2-PAK
• Rohs Compliant: Yes

NXP Semiconductors
Table 6.
BUK663R7-75C
Product data sheet
Symbol
Source-drain diode
V
t
Q
rr
Fig 5.
Fig 7.
SD
r
(mΩ)
R
(A)
DSon
I
D
300
250
200
150
100
10
50
8
6
4
2
0
0
function of drain-source voltage; typical values
of gate-source voltage; typical values
Output characteristics: drain current as a
Drain-source on-state resistance as a function
0
0
Characteristics
Parameter
source-drain voltage
reverse recovery time
recovered charge
4
0.5
V
GS
8
(V) = 10
…continued
1
12
5.0
1.5
Conditions
I
see
I
V
16
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S
S
DS
003aae420
003aae424
V
V
= 25 A; V
= 20 A; dI
DS
GS
Figure 16
= 25 V
(V)
(V)
3.4
4.0
3.8
3.6
4.5
Rev. 2 — 15 September 2010
20
2
GS
S
/dt = -100 A/µs; V
= 0 V; T
Fig 6.
Fig 8.
j
= 25 °C;
(S)
g
(A)
I
fs
250
200
150
100
D
125
100
50
75
50
25
0
0
function of gate-source voltage; typical values
drain current; typical values
Transfer characteristics: drain current as a
Forward transconductance as a function of
GS
0
0
= 0 V;
25
1
BUK663R7-75C
T
50
2
j
= 175 °C
Min
-
-
-
N-channel TrenchMOS FET
75
3
Typ
0.8
72
218
© NXP B.V. 2010. All rights reserved.
100
T
4
j
003aae422
003aae450
= 25 °C
V
I
GS
D
Max
1.2
-
-
(A)
(V)
125
5
Unit
V
ns
nC
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