BUK663R5-30C NXP Semiconductors, BUK663R5-30C Datasheet - Page 7

• Manufacturer Part Number: BUK663R5-30C
• Description: MOSFET,N CH,30V,100A,SOT404
• Manufacturer: NXP Semiconductors

Specifications of BUK663R5-30C

• Transistor Polarity: N Channel
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 2.9mohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 16V
• Operating Temperature Range: -55°C To +175°C
• Transistor Case: RoHS Compliant
• Transistor Case Style: D2-PAK
• Rohs Compliant: Yes

NXP Semiconductors
Table 6.
BUK663R5-30C
Product data sheet
Symbol
Source-drain diode
V
t
Q
rr
Fig 5.
Fig 7.
SD
r
(mΩ)
R
(A)
DSon
I
D
80
60
40
20
15
12
0
9
6
3
0
function of gate-source voltage; typical values
of gate-source voltage; typical values.
Transfer characteristics: drain current as a
Drain-source on-state resistance as a function
0
0
Characteristics
Parameter
source-drain voltage
reverse recovery time
recovered charge
1
4
T
j
2
= 175 °C
…continued
8
3
T
12
j
= 25 °C
All information provided in this document is subject to legal disclaimers.
4
003aae307
003aae312
V
V
GS
GS
(V)
(V)
Rev. 02 — 16 November 2010
16
Conditions
I
see
I
V
5
S
S
GS
= 25 A; V
= 20 A; dI
Figure 16
= 0 V; V
GS
S
DS
/dt = -100 A/µs;
Fig 6.
Fig 8.
= 0 V; T
= 25 V
(A)
(S)
g
I
D
125
100
fs
100
75
50
25
N-channel TrenchMOS intermediate level FET
80
60
40
20
0
0
drain current; typical values
function of drain-source voltage; typical values
Forward transconductance as a function of
Output characteristics: drain current as a
j
0
0
= 25 °C;
10
6
5
0.5
25
4.5
BUK663R5-30C
Min
-
-
-
50
1
Typ
0.8
46
57
1.5
75
V
GS
© NXP B.V. 2010. All rights reserved.
003aae308
003aae306
(V) = 3.2
V
I
D
DS
Max
1.2
-
-
(A)
(V)
3.4
3.3
4.0
3.6
3.8
100
2
Unit
V
ns
nC
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