BUK662R5-30C NXP Semiconductors, BUK662R5-30C Datasheet - Page 7

• Manufacturer Part Number: BUK662R5-30C
• Description: MOSFET,N CH,30V,100A,SOT404
• Manufacturer: NXP Semiconductors

Specifications of BUK662R5-30C

• Transistor Polarity: N Channel
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 2.4mohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 16V
• Operating Temperature Range: -55°C To +175°C
• Transistor Case: RoHS Compliant
• Transistor Case Style: D2-PAK
• Rohs Compliant: Yes

NXP Semiconductors
Table 6.
BUK662R5-30C
Product data sheet
Symbol
Source-drain diode
V
t
Q
rr
Fig 5.
Fig 7.
SD
r
(S)
g
(A)
fs
I
150
120
D
200
150
100
90
60
30
50
0
0
drain current; typical values
function of gate-source voltage; typical values
T
Forward transconductance as a function of
Transfer characteristics: drain current as a
0
0
j
Characteristics
= 25°C; V
Parameter
source-drain voltage
reverse recovery time
recovered charge
30
T
j
= 175 °C
DS
2
= 25 V
60
…continued
90
T
j
= 25 °C
4
120
V
Conditions
I
see
I
V
All information provided in this document is subject to legal disclaimers.
S
S
GS
DS
003aae532
003aae781
= 25 A; V
= 20 A; dI
I
(V)
D
Figure 16
= 25 V
(A)
150
Rev. 2 — 14 October 2010
6
GS
S
/dt = -100 A/µs; V
= 0 V; T
Fig 6.
Fig 8.
j
= 25 °C;
R
(mΩ)
(A)
DSon
I
240
D
180
120
N-channel TrenchMOS intermediate level FET
60
10
8
6
4
2
0
0
function of drain-source voltage; typical values
of gate-source voltage; typical values
Output characteristics: drain current as a
Drain-source on-state resistance as a function
GS
0
0
= 0 V;
10.0
0.5
5
6.0
BUK662R5-30C
Min
-
-
-
10
5.0
1
Typ
0.8
50
73
V
1.5
15
GS
© NXP B.V. 2010. All rights reserved.
(V) =
003aae780
003aae783
V
V
GS
DS
Max
1.2
-
-
(V)
(V)
4.5
4.0
3.8
3.6
3.4
3.2
20
2
Unit
V
ns
nC
7 of 14