BUK661R8-30C NXP Semiconductors, BUK661R8-30C Datasheet - Page 8
![MOSFET,N CH,30V,120A,SOT404](/photos/41/50/415039/sot404_3d_sml.gif)
BUK661R8-30C
Manufacturer Part Number
BUK661R8-30C
Description
MOSFET,N CH,30V,120A,SOT404
Manufacturer
NXP Semiconductors
Datasheet
1.BUK661R8-30C118.pdf
(16 pages)
Specifications of BUK661R8-30C
Transistor Polarity
N Channel
Drain Source Voltage Vds
30V
On Resistance Rds(on)
1.6mohm
Rds(on) Test Voltage Vgs
10V
Voltage Vgs Max
16V
Operating Temperature Range
-55°C To +175°C
Transistor Case
RoHS Compliant
Transistor Case Style
D2-PAK
Rohs Compliant
Yes
NXP Semiconductors
BUK661R8-30C
Product data sheet
Fig 7.
Fig 9.
(A)
(S)
g
I
D
10
10
10
10
10
10
200
150
100
fs
50
-1
-2
-3
-4
-5
-6
0
drain current; typical values
gate-source voltage
Forward transconductance as a function of
Sub-threshold drain current as a function of
0
0
25
1
min
50
2
typ
max
75
3
All information provided in this document is subject to legal disclaimers.
003aae295
003aad806
V
I
GS
D
(A)
(V)
Rev. 02 — 28 December 2010
100
4
Fig 8.
Fig 10. Gate-source threshold voltage as a function of
(mΩ)
R
V
DSon
GS(th)
(V)
N-channel TrenchMOS intermediate level FET
15
12
4
3
2
1
0
9
6
3
0
-60
of gate-source voltage; typical values.
junction temperature
Drain-source on-state resistance as a function
0
0
4
BUK661R8-30C
max @1mA
min @2.5mA
typ @1mA
60
8
120
12
© NXP B.V. 2010. All rights reserved.
003aae542
T
003aae365
V
j
GS
(°C)
(V)
180
16
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