BUK6607-75C NXP Semiconductors, BUK6607-75C Datasheet - Page 5

• Manufacturer Part Number: BUK6607-75C
• Description: MOSFET,N CH,75V,72A,SOT404
• Manufacturer: NXP Semiconductors

Specifications of BUK6607-75C

• Transistor Polarity: N Channel
• Drain Source Voltage Vds: 75V
• On Resistance Rds(on): 6mohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 16V
• Operating Temperature Range: -55°C To +175°C
• Transistor Case: RoHS Compliant
• Transistor Case Style: D2-PAK
• Rohs Compliant: Yes

NXP Semiconductors
5. Thermal characteristics
Table 5.
BUK6607-75C
Product data sheet
Symbol
R
Fig 4.
th(j-mb)
Z
(K/W)
th(j-mb)
10
10
10
−1
−2
−3
1
10
Transient thermal impedance from junction to mounting base as a function of pulse duration
−6
Thermal characteristics
δ = 0.5
0.05
0.02
0.1
0.2
Parameter
thermal resistance from
junction to mounting base
single pulse
10
−5
All information provided in this document is subject to legal disclaimers.
10
−4
Rev. 2 — 17 November 2010
Conditions
see
Figure 4
10
−3
10
−2
BUK6607-75C
Min
-
N-channel TrenchMOS FET
10
P
−1
Typ
-
t
p
t
p
T
© NXP B.V. 2010. All rights reserved.
(s)
003aae545
δ =
Max
0.74
T
t
t
p
1
Unit
K/W
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