BUK6607-55C NXP Semiconductors, BUK6607-55C Datasheet - Page 8

• Manufacturer Part Number: BUK6607-55C
• Description: MOSFET,N CH,55V,72A,SOT404
• Manufacturer: NXP Semiconductors

Specifications of BUK6607-55C

• Transistor Polarity: N Channel
• Drain Source Voltage Vds: 55V
• On Resistance Rds(on): 5.5mohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 16V
• Operating Temperature Range: -55°C To +175°C
• Transistor Case: RoHS Compliant
• Transistor Case Style: D2-PAK
• Rohs Compliant: Yes

NXP Semiconductors
BUK6607-55C
Product data sheet
Fig 9.
Fig 11. Drain-source on-state resistance as a function
(A)
R
(m Ω )
I
D
10
10
10
10
10
10
DSon
25
20
15
10
-1
-2
-3
-4
-5
-6
5
0
gate-source voltage
of drain current; typical values
Sub-threshold drain current as a function of
0
0
3.8
50
1
4.0
100
min
4.5
2
typ
V
150
GS
max
(V) = 5
3
200
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003aad806
V
003aaf008
GS
I
6.0
10.0
D
(V)
(A)
250
Rev. 1 — 14 October 2010
4
N-channel TrenchMOS logic and standard level FET
Fig 10. Gate-source threshold voltage as a function of
Fig 12. Normalized drain-source on-state resistance
V
GS(th)
(V)
a
2.5
1.5
0.5
4
3
2
1
0
2
1
0
-60
-60
junction temperature
factor as a function of junction temperature
0
0
max
min
typ
BUK6607-55C
60
60
120
120
© NXP B.V. 2010. All rights reserved.
003aad805
003aad803
T
T
j
j
(°C)
(°C)
180
180
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