BUK655R0-75C NXP Semiconductors, BUK655R0-75C Datasheet - Page 9

• Manufacturer Part Number: BUK655R0-75C
• Description: MOSFET,N CH,75V,98A,SOT78
• Manufacturer: NXP Semiconductors

Specifications of BUK655R0-75C

• Transistor Polarity: N Channel
• Drain Source Voltage Vds: 75V
• On Resistance Rds(on): 4.6mohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 16V
• Operating Temperature Range: -55°C To +175°C
• Transistor Case: RoHS Compliant
• Transistor Case Style: TO-220AB
• Rohs Compliant: Yes

NXP Semiconductors
BUK655R0-75C
Product data sheet
Fig 13. Gate charge waveform definitions
Fig 15. Input, output and reverse transfer capacitances
(pF)
10
C
10
10
10
5
4
3
2
10
as a function of drain-source voltage; typical
values
V
-2
V
V
V
GS(pl)
DS
GS(th)
GS
10
Q
GS1
-1
I
Q
D
GS
Q
GS2
1
Q
G(tot)
Q
GD
10
All information provided in this document is subject to legal disclaimers.
V
003aaa508
003aae431
DS
(V)
C
C
C
oss
rss
iss
Rev. 02 — 14 October 2010
10
2
Fig 14. Gate-source voltage as a function of gate
Fig 16. Source current as a function of source-drain
(A)
V
(V)
I
S
GS
160
120
10
80
40
8
6
4
2
0
0
charge; typical values
voltage; typical values
0
0
T
0.3
50
14 V
j
= 175 °C
BUK655R0-75C
100
N-channel TrenchMOS FET
0.6
V
DS
150
0.9
= 60 V
T
© NXP B.V. 2010. All rights reserved.
j
= 25 °C
Q
003aae435
003aae434
V
G
SD
(nC)
(V)
200
1.2
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