BUK653R5-55C NXP Semiconductors, BUK653R5-55C Datasheet - Page 4

• Manufacturer Part Number: BUK653R5-55C
• Description: MOSFET,N CH,55V,120A,SOT78
• Manufacturer: NXP Semiconductors

Specifications of BUK653R5-55C

• Transistor Polarity: N Channel
• Drain Source Voltage Vds: 55V
• On Resistance Rds(on): 3.3mohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 16V
• Operating Temperature Range: -55°C To +175°C
• Transistor Case: RoHS Compliant
• Transistor Case Style: TO-220AB
• Rohs Compliant: Yes

NXP Semiconductors
BUK653R5-55C
Product data sheet
Fig 1.
Fig 3.
(A)
(A)
I
I
D
10 −1
D
10
10
200
160
120
10
80
40
3
2
1
0
10 −
mounting base temperature
Continuous drain current as a function of
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
0
1
50
(1)
100
Limit R
DSon
150
All information provided in this document is subject to legal disclaimers.
T
= V
003aae743
mb
1
DS
(°C)
/ I
200
D
Rev. 1 — 27 October 2010
Fig 2.
P
(%)
der
120
N-channel TrenchMOS intermediate level FET
80
40
0
function of mounting base temperature
Normalized total power dissipation as a
0
DC
10
50
BUK653R5-55C
100
V
DS
(V)
150
© NXP B.V. 2010. All rights reserved.
T
t
100 ms
003aae386
p
mb
10 ms
100 μs
=10 μs
1 ms
03na19
(°C)
10
200
2
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