BUK652R3-40C NXP Semiconductors, BUK652R3-40C Datasheet - Page 9

• Manufacturer Part Number: BUK652R3-40C
• Description: MOSFET,N CH,40V,120A,SOT78
• Manufacturer: NXP Semiconductors

Specifications of BUK652R3-40C

• Transistor Polarity: N Channel
• Drain Source Voltage Vds: 40V
• On Resistance Rds(on): 2mohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 16V
• Operating Temperature Range: -55°C To +175°C
• Transistor Case: RoHS Compliant
• Transistor Case Style: TO-220AB
• Rohs Compliant: Yes

NXP Semiconductors
BUK652R3-40C
Product data sheet
Fig 13. Gate charge waveform definitions
Fig 15. Source current as a function of source-drain voltage; typical values
V
V
V
V
GS(pl)
DS
GS(th)
GS
Q
GS1
I
Q
D
GS
Q
GS2
Q
G(tot)
Q
GD
(A)
I
S
100
80
60
40
20
0
0
All information provided in this document is subject to legal disclaimers.
003aaa508
Rev. 2 — 18 August 2010
0.3
T
j
= 175 °C
0.6
Fig 14. Gate-source voltage as a function of gate
V
(V)
GS
N-channel TrenchMOS intermediate level FET
10
0.9
8
6
4
2
0
T
charge; typical values
j
0
= 25 °C
003aae255
V
SD
(V)
1.2
100
14V
BUK652R3-40C
200
V
© NXP B.V. 2010. All rights reserved.
DS
Q
G
003aae254
= 32V
(nC)
300
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