BSS138P NXP Semiconductors, BSS138P Datasheet - Page 2

• Manufacturer Part Number: BSS138P
• Description: MOSFET,N CH,60V,0.36A,SOT23
• Manufacturer: NXP Semiconductors

Specifications of BSS138P

• Transistor Polarity: N Channel
• Drain Source Voltage Vds: 60V
• On Resistance Rds(on): 0.9ohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 20V
• Operating Temperature Range: -55°C To +150°C
• Transistor Case: RoHS Compliant
• Transistor Case Style: SOT-23
• Rohs Compliant: Yes

NXP Semiconductors
2. Pinning information
3. Ordering information
4. Marking
5. Limiting values
BSS138P
Product data sheet
Table 2.
Table 3.
Table 4.
[1]
Table 5.
In accordance with the Absolute Maximum Rating System (IEC 60134).
Pin
1
2
3
Type number Package
BSS138P
Type number
BSS138P
Symbol
V
V
I
I
D
DM
DS
GS
* = placeholder for manufacturing site code
Symbol
G
S
D
Parameter
drain-source voltage
gate-source voltage
drain current
peak drain current
Pinning
Ordering information
Marking codes
Limiting values
Name
TO-236AB plastic surface-mounted package; 3 leads
All information provided in this document is subject to legal disclaimers.
Description
gate
source
drain
Rev. 1 — 2 November 2010
Description
T
T
V
Conditions
T
single pulse; t
amb
amb
amb
GS
T
T
amb
amb
= 10 V
= 25 °C
= 25 °C
= 25 °C;
= 25 °C
= 100 °C
Marking code
AN*
60 V, 360 mA N-channel Trench MOSFET
p
≤ 10 μs
Simplified outline
1
[1]
[1]
3
Min
-
-
-
-
-
2
BSS138P
Graphic symbol
© NXP B.V. 2010. All rights reserved.
Max
60
±20
360
230
1.2
mbb076
G
Version
SOT23
D
S
Unit
V
V
mA
mA
A
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