SI4890DY-T1-GE3 Vishay, SI4890DY-T1-GE3 Datasheet - Page 3

• Manufacturer Part Number: SI4890DY-T1-GE3
• Description: N CHANNEL MOSFET, 30V, 11A
• Manufacturer: Vishay

Specifications of SI4890DY-T1-GE3

• Transistor Polarity: N Channel
• Continuous Drain Current Id: 11A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 20mohm
• Rds(on) Test Voltage Vgs: 4.5V
• Threshold Voltage Vgs Typ: 10V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 70855
S09-0869-Rev. B, 18-May-09
0.05
0.04
0.03
0.02
0.01
50
40
30
20
10
10
0
8
6
4
2
0
0
0
0
0
V
I
D
DS
= 11 A
On-Resistance vs. Drain Current
= 15 V
V
2
10
5
GS
V
Q
DS
Output Characteristics
= 4.5 V
g
V
- Drain-to-Source Voltage (V)
- Total Gate Charge (nC)
GS
I
D
Gate Charge
= 10 V thru 4 V
10
- Drain Current (A)
20
4
15
30
6
V
3 V
GS
20
8
40
= 10 V
10
25
50
1800
1500
1200
900
600
300
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
50
40
30
20
10
0
0
- 50
0
0
On-Resistance vs. Junction Temperature
V
I
D
- 25
0.5
GS
= 1 1 A
C
= 10 V
rss
C
6
iss
1.0
T
V
Transfer Characteristics
0
J
GS
V
25 °C
- Junction Temperature (°C)
DS
- Gate-to-Source Voltage (V)
1.5
T
- Drain-to-Source Voltage (V)
C
25
C
Capacitance
= 125 °C
12
oss
2.0
50
Vishay Siliconix
2.5
18
75
Si4890DY
3.0
- 55 °C
100
www.vishay.com
3.5
24
125
4.0
150
30
4.5
3