IRFB17N50LPBF Vishay, IRFB17N50LPBF Datasheet - Page 6

• Manufacturer Part Number: IRFB17N50LPBF
• Description: N CHANNEL MOSFET, 500V, 16A, TO-220
• Manufacturer: Vishay

Specifications of IRFB17N50LPBF

• Transistor Polarity: N Channel
• Continuous Drain Current Id: 16A
• Drain Source Voltage Vds: 500V
• On Resistance Rds(on): 320mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 5V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 320 mOhm @ 9.9A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 16A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 130nC @ 10V
• Input Capacitance (ciss) @ Vds: 2760pF @ 25V
• Power - Max: 220W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 0.32 Ohm @ 10 V
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 16 A
• Power Dissipation: 220000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: *IRFB17N50LPBF

Document Number: 91098
Fig 13a. Gate Charge Test Circuit
800
640
480
320
160
0
25
Fig 12a. Maximum Avalanche Energy
12V
Starting T , Junction Temperature ( C)
V
GS
Same Type as D.U.T.
Current Regulator
50
.2µF
Vs. Drain Current
50KΩ
3mA
J
Current Sampling Resistors
.3µF
75
I
G
D.U.T.
100
I
D
TOP
BOTTOM
+
-
V
DS
125
I D
10A
16A
°
7A
150
Fig 12c. Unclamped Inductive Test Circuit
Fig 12d. Unclamped Inductive Waveforms
I
AS
Fig 13b. Basic Gate Charge Waveform
V
GS
R G
20V
V
V DS
G
t p
t p
Q
GS
I AS
D.U.T
0.01 Ω
L
V
Q
Charge
(BR)DSS
Q
GD
G
15V
www.vishay.com
DRIVER
+
- V DD
A
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