IRFB17N50LPBF Vishay, IRFB17N50LPBF Datasheet - Page 2

• Manufacturer Part Number: IRFB17N50LPBF
• Description: N CHANNEL MOSFET, 500V, 16A, TO-220
• Manufacturer: Vishay

Specifications of IRFB17N50LPBF

• Transistor Polarity: N Channel
• Continuous Drain Current Id: 16A
• Drain Source Voltage Vds: 500V
• On Resistance Rds(on): 320mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 5V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 320 mOhm @ 9.9A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 16A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 130nC @ 10V
• Input Capacitance (ciss) @ Vds: 2760pF @ 25V
• Power - Max: 220W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 0.32 Ohm @ 10 V
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 16 A
• Power Dissipation: 220000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: *IRFB17N50LPBF

Document Number: 91098
Avalanche Characteristics
Thermal Resistance

Dynamic @ T
‚
ƒ
Static @ T
Notes:
Symbol
E
I
E
Symbol
R
R
R
I
I
g
Q
Q
Q
t
t
t
t
C
C
C
C
C
C
Symbol
V
∆V
R
V
AR
DSS
GSS
d(on)
r
d(off)
f
Symbol
fs
AS
AR
θJC
θCS
θJA
(BR)DSS
GS(th)
gs
gd
iss
oss
rss
oss
oss
oss
DS(on)
g
Repetitive rating; pulse width limited by
I
T
max. junction temperature.
(BR)DSS
Starting T
SD
I
AS
J
eff.
≤ 150°C
≤ 16A, di/dt ≤ 347A/µs, V
= 16A.
/∆T
J
J
Drain-to-Source Leakage Current
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
= 25°C, L = 3.0mH, R
J
= 25°C (unless otherwise specified)
J
Single Pulse Avalanche Energy‚
Avalanche Current
Repetitive Avalanche Energy
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
= 25°C (unless otherwise specified)
Parameter
Parameter
DD
≤ V
Parameter
Parameter
G
(BR)DSS
= 25Ω,
,
„
Pulse width ≤ 300µs; duty cycle ≤ 2%.
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
500
–––
–––
–––
–––
–––
–––
Min. Typ. Max. Units
Min. Typ. Max. Units
3.0
11
2760 –––
3690 –––
0.28 0.32
–––
–––
–––
–––
325
159
–––
–––
–––
–––
–––
––– -100
0.6
21
51
50
28
37
84
–––
130
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
100
5.0
2.0
33
59
50
V/°C
mA
nC
ns
pF
µA
nA
S
Ω
Typ.
Typ.
V
V
0.50
–––
–––
–––
–––
–––
V
I
V
V
V
I
R
V
V
V
ƒ = 1.0MHz
V
V
V
V
Reference to 25°C, I
V
V
V
V
V
V
D
D
DS
DS
GS
DD
GS
GS
DS
GS
GS
GS
G
GS
GS
DS
DS
DS
GS
GS
= 16A
= 16A
= 7.5Ω
= 50V, I
= 400V
= 25V
= 10V „
= 250V
= 10V „
= 0V
= 0V, V
= 0V, V
= 0V, V
= 10V, I
= V
= 500V, V
= 400V, V
= 0V, I
= 30V
= -30V
GS
, I
D
DS
D
D
D
DS
DS
= 250µA
Conditions
Conditions
= 9.9A
= 9.9A
= 250µA
GS
GS
= 0V to 400V …
Max.
Max.
= 1.0V, ƒ = 1.0MHz
= 400V, ƒ = 1.0MHz
0.56
390
–––
16
22
62
= 0V
= 0V, T
D
www.vishay.com
= 1mA†
„
J
= 125°C
Units
Units
°C/W
mJ
mJ
A
2