BSP149 Infineon Technologies, BSP149 Datasheet - Page 3
![N CH MOSFET, 200V, 480mA, SOT-223](/photos/19/8/190865/4467709_sml.jpg)
BSP149
Manufacturer Part Number
BSP149
Description
N CH MOSFET, 200V, 480mA, SOT-223
Manufacturer
Infineon Technologies
Datasheet
1.BSP149.pdf
(9 pages)
Specifications of BSP149
Transistor Polarity
N Channel
Continuous Drain Current Id
480mA
Drain Source Voltage Vds
200V
On Resistance Rds(on)
3.5ohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
-1.4V
Package
SOT-223
Vds (max)
200.0 V
Id (max)
0.66 A
Idpuls (max)
2.6 A
Rds (on) (max) (@10v)
1.8 Ohm
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
BSP149
Manufacturer:
INFINEON
Quantity:
30 000
Part Number:
BSP149
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Part Number:
BSP149H6327XTSA1
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Rev. 1.2
Parameter
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Reverse Diode
Diode continous forward current
Diode pulse current
Diode forward voltage
Reverse recovery time
Reverse recovery charge
Symbol Conditions
C
C
C
t
t
t
t
Q
Q
Q
V
I
I
V
t
Q
d(on)
r
d(off)
f
S
S,pulse
rr
rss
plateau
SD
iss
oss
gs
gd
g
rr
V
f =1 MHz
V
V
I
V
I
V
T
V
T
V
di
D
D
A
j
GS
DD
GS
DD
GS
GS
R
=0.50 A, R
=0.05 A,
=25 °C
F
page 3
=25 °C
=100 V, I
/dt =100 A/µs
=-3 V, V
=100 V,
=-2…7 V,
=160 V,
=-3 to 5 V
=-3 V, I
F
F
DS
=0.66 A,
G
=0.5 A,
=6
=25 V,
min.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Values
0.74
0.16
typ.
326
5.1
3.4
5.6
0.9
41
17
45
21
11
42
60
-
-
max.
0.66
430
7.7
5.1
1.0
8.4
2.6
1.2
55
25
68
31
14
65
90
-
BSP149
2005-11-28
Unit
pF
ns
nC
V
A
V
ns
nC