ZXMN10A11G Diodes Inc, ZXMN10A11G Datasheet - Page 4

• Manufacturer Part Number: ZXMN10A11G
• Description: MOSFET, N CH, 100V, 2.4A, SOT-223
• Manufacturer: Diodes Inc

Specifications of ZXMN10A11G

• Transistor Polarity: N Channel
• Continuous Drain Current Id: 2.4A
• Drain Source Voltage Vds: 100V
• On Resistance Rds(on): 600mohm
• Rds(on) Test Voltage Vgs: 10V
• Power Dissipation Pd: 3.9W
• No. Of Pins: 4
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

ELECTRICAL CHARACTERISTICS (at TA = 25°C unless otherwise stated)
NOTES:
(1) Measured under pulsed conditions. Width ≤ 300μs. Duty cycle ≤ 2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
ZXMN10A11G
PARAMETER
STATIC
Drain-source breakdown voltage
Zero gate voltage drain current
Gate-body leakage
Gate-source threshold voltage
Static drain-source On-State resistance
Forward transconductance
DYNAMIC
Input capacitance
Output capacitance
Reverse transfer capacitance
SWITCHING
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate charge
Total gate charge
Gate-source charge
Gate-drain charge
SOURCE-DRAIN DIODE
Diode forward voltage
Reverse recovery time
Reverse recovery charge
S E M I C O N D U C T O R S
(3)
(2) (3)
(1)
(3)
(3)
(3)
(1)
SYMBOL
V
I
I
V
R
g
C
C
C
t
t
t
t
Q
Q
Q
Q
V
t
Q
DSS
GSS
d(on)
r
d(off)
f
rr
fs
(BR)DSS
GS(th)
DS(on)
iss
oss
rss
SD
g
g
gs
gd
rr
4
MIN.
100
2.0
TYP.
0.85
274
2.7
1.7
7.4
3.5
5.4
1.4
1.5
21
11
26
30
4
3
MAX.
0.35
0.45
0.95
100
4.0
1
UNIT
nA
nC
nC
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
ns
V
V
S
V
A
ISSUE 5 - DECEMBER 2004
I
V
V
I
V
V
V
V
f=1MHz
V
R
V
I
V
I
T
V
T
di/dt= 100A/μs
D
D
D
D
J
J
DS
GS
GS
GS
DS
DS
DD
G
DS
DS
GS
=2.5A
=250 A, V
=250 A, V
=2.5A
=25°C, I
=25°C, I
≅6.0 , V
=100V, V
=±20V, V
=10V, I
=6V, I
=15V,I
=50 V, V
=50V, V
=50V,V
=0V
=50V, I
CONDITIONS
D
D
S
F
D
=1.3A
GS
=1.0A,
GS
=1.85A,
=2.6A
D
GS
=2.6A
GS
GS
DS
=1A
GS
DS
=10V,
=10V
=5V,
=0V,
=0V
= V
=0V
=0V
GS