ZXMN10A11G Diodes Inc, ZXMN10A11G Datasheet - Page 2

• Manufacturer Part Number: ZXMN10A11G
• Description: MOSFET, N CH, 100V, 2.4A, SOT-223
• Manufacturer: Diodes Inc

Specifications of ZXMN10A11G

• Transistor Polarity: N Channel
• Continuous Drain Current Id: 2.4A
• Drain Source Voltage Vds: 100V
• On Resistance Rds(on): 600mohm
• Rds(on) Test Voltage Vgs: 10V
• Power Dissipation Pd: 3.9W
• No. Of Pins: 4
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

ABSOLUTE MAXIMUM RATINGS
THERMAL RESISTANCE
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t 10 secs.
(c) Repetitive rating 25mm x 25mm FR4 PCB, D=0.02 pulse width = 300 s - pulse width limited by maximum junction temperature. Refer to
ZXMN10A11G
PARAMETER
Drain-source voltage
Gate-source voltage
Continuous drain current V
Pulsed drain current
Continuous source current (body diode)
Pulsed source current (body diode)
Power dissipation at T
Linear derating factor
Power dissipation at T
Linear derating factor
Operating and storage temperature range
PARAMETER
Junction to ambient
Junction to ambient
transient Thermal Impedance graph.
S E M I C O N D U C T O R S
(c)
(a)
(b)
A
A
=25°C
=25°C
V
V
GS
GS
GS
(a)
(b)
=10V; T
=10V; T
=10V; T
(c)
A
A
A
=25°C
=70°C
=25°C
(b)
(b)
(b)
(a)
SYMBOL
V
V
I
I
I
I
P
P
T
SYMBOL
R
R
D
DM
S
SM
2
D
D
j
DSS
GS
:T
θJA
θJA
stg
-55 to +150
VALUE
LIMIT
62.5
100
2.4
1.9
1.7
7.9
4.6
7.9
3.9
16
31
32
2
20
ISSUE 5 - DECEMBER 2004
mW/°C
mW/°C
UNIT
UNIT
°C/W
°C/W
W
W
°C
V
V
A
A
A
A