ZXM61N03F Diodes Inc, ZXM61N03F Datasheet - Page 4

• Manufacturer Part Number: ZXM61N03F
• Description: MOSFET, N CH, 30V, 1.4A, SOT-23
• Manufacturer: Diodes Inc

Specifications of ZXM61N03F

• Transistor Polarity: N Channel
• Continuous Drain Current Id: 1.4A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 220mohm
• Rds(on) Test Voltage Vgs: 10V
• Power Dissipation Pd: 806mW
• No. Of Pins: 3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

ELECTRICAL CHARACTERISTICS
NOTES
(1) Measured under pulsed conditions. Width 300 s. Duty cycle 2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
ISSUE 1 - JUNE 2004
PARAMETER
STATIC
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
Gate-Source Threshold Voltage
Static Drain-Source On-State Resistance
(1)
Forward Transconductance (3)
DYNAMIC (3)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING(2) (3)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
SOURCE-DRAIN DIODE
Diode Forward Voltage (1)
Reverse Recovery Time (3)
Reverse Recovery Charge (3)
ZXM61N03F
SYMBOL MIN.
V
I
I
V
R
g
C
C
C
t
t
t
t
Q
Q
Q
V
t
Q
DSS
GSS
d(on)
r
d(off)
f
rr
(BR)DSS
GS(th)
DS(on)
fs
iss
oss
rss
SD
g
gs
gd
rr
(at T
4
30
1.0
0.87
A
= 25°C unless otherwise stated).
TYP.(3) MAX.
150
35
15
1.9
2.5
5.8
3.0
11.0
3.5
1
100
0.22
0.30
4.1
0.4
0.63
0.95
UNIT CONDITIONS.
V
nA
V
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
nC
A
I
V
V
I
V
V
V
V
f=1MHz
V
R
(refer to test
circuit)
V
I
(refer to test
circuit)
T
V
T
di/dt= 100A/ s
D
D
D
J
J
DS
GS
GS
GS
DS
DS
DD
G
DS
GS
=250 A, V
=250 A, V
=0.91A
=25°C, I
=25°C, I
=6.2 , R
=30V, V
=10V,I
=25 V, V
=24V,V
= 20V, V
=10V, I
=4.5V, I
=0V
=15V, I
D
S
F
D
GS
=0.46A
D
=0.91A,
=0.91A,
D
GS
D
=0.91A
GS
GS
=0.91A
DS
=0.46A
=16
=10V,
DS
=0V
=0V,
=0V
= V
=0V
GS