ZXM61N03F Diodes Inc, ZXM61N03F Datasheet - Page 2

• Manufacturer Part Number: ZXM61N03F
• Description: MOSFET, N CH, 30V, 1.4A, SOT-23
• Manufacturer: Diodes Inc

Specifications of ZXM61N03F

• Transistor Polarity: N Channel
• Continuous Drain Current Id: 1.4A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 220mohm
• Rds(on) Test Voltage Vgs: 10V
• Power Dissipation Pd: 806mW
• No. Of Pins: 3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

ABSOLUTE MAXIMUM RATINGS.
THERMAL RESISTANCE
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper,
in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t 5 secs.
(c) Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal
Impedance graph.
ISSUE 1 - JUNE 2004
PARAMETER
Drain-Source Voltage
Gate Source Voltage
Continuous Drain Current (V
Pulsed Drain Current (c)
Continuous Source Current (Body Diode) (b)
Pulsed Source Current (Body Diode)
Power Dissipation at T
Linear Derating Factor
Power Dissipation at T
Linear Derating Factor
Operating and Storage Temperature Range
ZXM61N03F
PARAMETER
Junction to Ambient (a)
Junction to Ambient (b)
A
A
=25°C (a)
=25°C (b)
(V
GS
GS
=10V; T
=10V; T
A
A
=25°C)(b)
=70°C)(b)
SYMBOL
V
I
I
P
P
V
I
I
T
2
D
DM
S
SM
SYMBOL
R
R
D
D
j
DSS
GS
:T
JA
JA
stg
-55 to +150
VALUE
LIMIT
625
806
200
155
1.4
1.1
7.3
0.8
7.3
6.4
30
20
5
mW/°C
mW/°C
UNIT
UNIT
°C/W
°C/W
mW
mW
°C
V
V
A
A
A
A